2020
DOI: 10.1016/j.actamat.2019.12.051
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Metal hetero-diffusion along the metal-ceramic interfaces: A case study of Au diffusion along the Ni-sapphire interface

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Cited by 19 publications
(4 citation statements)
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“…The diffusion of Au at interfaces should thus be the most active mechanism of diffusion and is also favored because the Fe NPs and the amorphous silica form an incoherent interface with a low contact area. Au diffusion was also recently reported at a metal-ceramic interface, namely the Ni-sapphire interface [26]. The authors demonstrate that this interface diffusion was faster than the bulk diffusion of Au in Ni, in the investigated range of annealing temperature (450-550 • C).…”
Section: Adhesion and Orientation Of The Nps On Silicamentioning
confidence: 51%
“…The diffusion of Au at interfaces should thus be the most active mechanism of diffusion and is also favored because the Fe NPs and the amorphous silica form an incoherent interface with a low contact area. Au diffusion was also recently reported at a metal-ceramic interface, namely the Ni-sapphire interface [26]. The authors demonstrate that this interface diffusion was faster than the bulk diffusion of Au in Ni, in the investigated range of annealing temperature (450-550 • C).…”
Section: Adhesion and Orientation Of The Nps On Silicamentioning
confidence: 51%
“…In recent years, both in situ and ex situ studies have been developed to focus on the growth kinetic and inuencing factors of UTGLs formation on the different substrates, including solid substrates (e.g., silicon (Si) wafers and oxides thin lms), 16,22,[32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] so substrates (e.g., polymer thin lms), 28,[48][49][50][51][52][53][54][55][56][57][58] and nanostructured substrates (e.g., phase-separated polymer lms, nanostructured oxides thin lms, and quantum dot arrays). [59][60][61][62][63][64] 2.1 On solid substrates Depositing Au on a at solid substrate, such as Si wafer, is regarded as the idealized case to study the UTGL growth without other inuencing factors. Therefore, many fundamental studies focused on the growth processes of UTGLs on Si wafers and other at solid substrates.…”
Section: Formation Fundamentals Of Ultrathin Gold Layers On Different...mentioning
confidence: 99%
“…Their results, supported by first-principles density-functional theory (DFT) calculations, suggest that the rate of Ni diffusion along this interface is close to the rate of Ni self-diffusion in Ni GBs. On the other hand, Barda et al [32] applied a similar experimental method and found that Au hetero-diffusion along the same Ni-Al 2 O 3 interface was slower than Au hetero-diffusion in Ni GBs.…”
Section: Introductionmentioning
confidence: 99%