“…In recent years, both in situ and ex situ studies have been developed to focus on the growth kinetic and inuencing factors of UTGLs formation on the different substrates, including solid substrates (e.g., silicon (Si) wafers and oxides thin lms), 16,22,[32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] so substrates (e.g., polymer thin lms), 28,[48][49][50][51][52][53][54][55][56][57][58] and nanostructured substrates (e.g., phase-separated polymer lms, nanostructured oxides thin lms, and quantum dot arrays). [59][60][61][62][63][64] 2.1 On solid substrates Depositing Au on a at solid substrate, such as Si wafer, is regarded as the idealized case to study the UTGL growth without other inuencing factors. Therefore, many fundamental studies focused on the growth processes of UTGLs on Si wafers and other at solid substrates.…”