Metal-insulator-metal capacitors based on lanthanum oxide high-κ dielectric nanolayers fabricated using dense plasma focus device

Abstract

Articles you may be interested inHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors J. Appl. Phys. 104, 054510 (2008); 10.1063/1.2973687 High capacitance density metal-insulator-metal structure based on Al 2 O 3 -Hf Ti O nanolaminate stacks Appl. Phys. Lett. 90, 013506 (2007); 10.1063/1.2425030 Physical and electrical characterization of HfO 2 metal-insulator-metal capacitors for Si analog circuit applicationsMetal-insulator-metal (MIM) capacitors with lanthanum oxide (La 2 O 3 ) high-j dielectric, for potential applications in mixed-signal integrated circuit (IC), have been fabricated using a dense plasma focus device. The electrical characteristics and morphological properties of the fabricated nanodevices are studied. The MIM capacitors were further annealed to enhance the electrical properties in terms of the low leakage current density, the high capacitance density, and the improved capacitance voltage linearity. The minimum leakage current densities of $1.6 Â 10 À9 A/cm 2 and $2.0 Â 10 À10 A/cm 2 at À1 V are obtained along with the maximum capacitance densities of $17.96 fF/lm 2 at 100 kHz and $19.10 fF/lm 2 at 1 MHz, 0 V for as-fabricated and annealed MIM capacitors having 15 nm thick dielectric layers as measured using ellipsometry. The nanofilms with the minimum root mean square roughness of $10 nm are examined using atomic force microscopy. The results are superior compared to some other MIM capacitors and can be optimized to achieve the best electrical parameters for potential applications in radio frequency (RF)/mixed signal ICs. The high frequency C-V measurements indicate an increase in the capacitance density upon increasing the frequency which supports the possibility of potential high-frequency/RF applications of the MIM capacitors.

Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

“…The modified DPF device with suitable modification has been used worldwide for the fabrication of nanoparticles and nanostructures of different materials [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. In most of these studies, the modification of anode is almost similar but the arrangement for placing the substrate varies.…”

“…The modified DPF device has been established as a promising tool for nanofabrication by the plasma research group at the University of Delhi [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. In particular, several nanostructures of metals [ 8 , 9 , 10 , 11 , 12 , 13 ], semiconductors [ 14 , 15 , 16 , 17 , 18 ] and insulators [ 19 , 20 , 21 ] have been produced using the modified DPF device. Apart from this the nanostructures of materials, such as TiC [ 3 ], hydroxyapatite (HA) [ 4 ], Al/a-C [ 5 ], WN 2 [ 6 ], etc.…”

Efeitos magneto-capacitivos em heteroestruturas metal/isolante+nanofios metálicos/metal

“…Após a voltagem passar pelo valor de zero a corrente volta a crescer novamente proporcionalmente ao campo, chegando a um valor máximo de corrente menor que quando a ddp tinha valor máximo negativo (−1V ). Isso ocorre porque conforme a ddp cresce e carregamos as placas do capacitor, estas cargas que se acumulam na superfície das placas induzem cargas na parte do dielétrico proximas a elas, o que na literatura vemos como cargas armadilha (Trap Charges) [19,39], ou seja, são cargas que blindam as placas em relação essa corrente de fuga, sendo assim as cargas do fluxo de corrente de fuga, não conseguem se deslocar mais tanto e chegar até as placas por conta desse acúmulo de cargas blindá-las. Fora isso temos também cargas que ficam no caminho ao longo do trajeto do dielétrico por terem relaxado em um estado ligado em outro átomo.…”