Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic  Layer Deposition

Karbasian, Golnaz; McConnell, Michael S.; George, Hubert C.; Schneider, Louisa C.; Filmer, Matthew J.; Orlov, Alexei O.; Nazarov, A. M.; Snider, Gregory L.

doi:10.3390/app7030246

Cited by 15 publications

(9 citation statements)

References 49 publications

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“…As scaling becomes increasingly difficult, continued advancement of microelectronics now relies on the introduction of new materials with properties chosen to address current challenges. For example, ultra‐smooth electrodes are needed to ensure uniform control of the very high electric fields placed across the ultra‐thin insulators in metal–insulator–metal (MIM) structures used for capacitors, resistive random access memories (RRAM), tunnel diodes for high speed rectifying applications including rectennas and infrared detection hot electron transistors, and single electron transistors . New metal gates with low and uniform work function ( Ф M ) are needed to maximize capacitive control of the channel and minimize threshold voltage ( V th ) variation in metal/oxide/semiconductor field‐effect transistors (MOSFETs) .…”

Section: Results For Barrier Heights Presented In This Work As Comparmentioning

confidence: 99%

Assessment of Energy Barriers Between ZrCuAlNi Amorphous Metal and Atomic Layer Deposition Insulators Using Internal Photoemission Spectroscopy

Jenkins

Klarr

Austin

et al. 2018

Physica Rapid Research Ltrs

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The energy barrier heights between an ultra-smooth amorphous metal electrode, ZrCuAlNi, and several atomic layer deposited (ALD) insulators are measured using internal photoemission (IPE) spectroscopy. ZrCuAlNiinsulator barriers are characterized within metal-insulator-metal (MIM) stacks with Al top contacts and results are compared with the Al/insulator barrier heights. The measured barrier heights at the ZrCuAlNi interface are found to be 3.3, 3.2, 3.0, and 2.2 eV for SiO 2 , Al 2 O 3 , HfO 2 , and ZrO 2 , respectively. This barrier height trend is consistent with the electron affinity of the respective oxides. However, barriers for SiO 2 and Al 2 O 3 are smaller than that ideally expected based on the reported vacuum work function of ZrCuAlNi, indicating a smaller ZrCuAlNi effective work function in these device structures. The measured Al barrier height results confirm previous reports of a negative dipole at the Al-ALD insulator interface.

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Section: Results For Barrier Heights Presented In This Work As Comparmentioning

confidence: 99%

Assessment of Energy Barriers Between ZrCuAlNi Amorphous Metal and Atomic Layer Deposition Insulators Using Internal Photoemission Spectroscopy

Jenkins

Klarr

Austin

et al. 2018

Physica Rapid Research Ltrs

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“…Main Text: Inorganic oxide glasses show great promise for modern electronics, including optoelectronics, flexible electronics, photovoltaics, single electron transistors and battery technologies (1)(2)(3)(4)(5)(6). These glasses allow for a wide range of tailored, functional properties from full dielectrics to tuned semiconductors coupled with visible light transparency, and good chemical and thermal stability.…”

mentioning

confidence: 99%

Highly ductile amorphous oxide at room temperature and high strain rate

Frankberg

Kalikka

Ferré

et al. 2019

Science

130

111

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Oxide glasses are an integral part of the modern world, but their usefulness can be limited by their characteristic brittleness at room temperature. We show that amorphous aluminum oxide can permanently deform without fracture at room temperature and high strain rate by a viscous creep mechanism. These thin-films can reach flow stress at room temperature and can flow plastically up to a total elongation of 100%, provided that the material is dense and free of geometrical flaws. Our study demonstrates a much higher ductility for an amorphous oxide at low temperature than previous observations. This discovery may facilitate the realization of damage-tolerant glass materials that contribute in new ways, with the potential to improve the mechanical resistance and reliability of applications such as electronic devices and batteries.

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“…Metal–insulator–metal (MIM) tunnel diodes play an important role in many applications, such as energy harvesting, , infrared detection, − single-electron transistors, , resistive random access memory, , and matrix addressed displays . For energy harvesting applications where MIM diodes operate as rectifiers, the diode capacitance ( C ) and resistance ( R ) determine the maximum operation frequency f c = 1/(2π RC ).…”

mentioning

confidence: 99%

Large Errors from Assuming Equivalent DC and High-Frequency Electrical Characteristics in Metal–Multiple-Insulator–Metal Diodes

2018

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Metal−insulator−metal (MIM) tunnel diodes are essential for ultra-high-speed rectification. We review an erroneous method for distributing DC voltage drops across multiple insulator layers that is used in all the published literature on these devices. It has resulted in large errors between designed and fabricated multi-insulator diodes. For multi-insulator MIM diodes, voltage division is dependent on both tunneling resistances and oxide capacitances. We demonstrate that correct voltage division at DC is determined by the rectification resistance, as opposed to the commonly used capacitive voltage division. We find that DC characteristics of multi-insulator diodes cannot be used to predict high-frequency behavior.

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Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

Cited by 15 publications

References 49 publications

Assessment of Energy Barriers Between ZrCuAlNi Amorphous Metal and Atomic Layer Deposition Insulators Using Internal Photoemission Spectroscopy

Assessment of Energy Barriers Between ZrCuAlNi Amorphous Metal and Atomic Layer Deposition Insulators Using Internal Photoemission Spectroscopy

Highly ductile amorphous oxide at room temperature and high strain rate

Large Errors from Assuming Equivalent DC and High-Frequency Electrical Characteristics in Metal–Multiple-Insulator–Metal Diodes

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