Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 
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Han, Tingting; Chen, L.; Cai, Cong; Wang, Z. G.; Wang, Y. D.; Zhang, Xin; Zhang, Yan

doi:10.1103/physrevlett.126.106602

Cited by 15 publications

(12 citation statements)

References 48 publications

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“…2.5.5.2 ARPES study on phase engineering in 2D materials ARPES is one of the most essential experimental techniques used to study the electronic bands of solids 408 . Demonstrating the change of phase from a metal to insulator, Han et al report the surface doped 2H-MoTe2 409 . As shown in Fig.…”

Section: Xas Study On Phase Engineering In 2d Materialsmentioning

confidence: 99%

Recent Progress on Two-Dimensional Materials

Chang¹,

Chen²,

Chen³

et al. 2021

Acta Physico Chimica Sinica

325

119

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Research on two-dimensional (2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications.In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief background 物理化学学报 Acta Phys. -Chim. Sin. 2021, 37 (12), 2108017 (3 of 151) introduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials (PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.

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Section: Xas Study On Phase Engineering In 2d Materialsmentioning

confidence: 99%

Recent Progress on Two-Dimensional Materials

Chang¹,

Chen²,

Chen³

et al. 2021

Acta Physico Chimica Sinica

325

119

View full text Add to dashboard Cite

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“…19 In general, heavy doping in a semiconductor leads to defect band broadening and metallic conduction. 32–34 This metallic conduction could take place due to overlapping of the wave functions of electrons in the adjacent doping sites giving rise to defect bands. Carrier conduction through such defect bands can lead to a Mott metal–insulator transition (MMIT).…”

Section: Resultsmentioning

confidence: 99%

Ultrafast carrier dynamics in vanadium-doped MoS₂ alloys

Upadhyay,

Sharma,

Maity

et al. 2023

Nanoscale

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“…Multiple mechanisms have been proposed to underly the formation of a pseudogap, such as polaronic interactions, , Luttinger-liquid behavior, , the Efros–Shklovskii effect, , and charge density wave (CDW) fluctuations . The physical origins of such interactions are very different even though they can give rise to similar pseudogaps; strong electron–phonon coupling and charge–lattice distortions support polaronic and CDW orders, while electron–electron interactions support Luttinger-liquid behavior.…”

mentioning

confidence: 99%

“…Thus, the change in band velocity after pump excitation (Figure F–H) is clearly not a signature of Luttinger-liquid behavior. Second, the static Coulomb repulsions among Anderson-localized carriers render the so-called Efros–Shklovski pseudogap. , However, there is not a natural way for a disorder-localized high temperature phase to give rise to a low temperature CDW phase. The well-defined CDW phase in (TaSe 4 ) 2 I at low temperature does not support a dominant role of Anderson localization in the electronic properties .…”

mentioning

confidence: 99%

“…Pseudogaps and the absence of a clear Fermi edge are found in a broad class of materials including cuprates, colossal magnetoresistance manganites, and quasione-dimensional (quasi-1D) materials, where it has been a long-standing and important puzzle. 1−4 Multiple mechanisms have been proposed to underly the formation of a pseudogap, such as polaronic interactions, 1,3 Luttinger-liquid behavior, 4,5 the Efros−Shklovskii effect, 6,7 and charge density wave (CDW) fluctuations. 8 The physical origins of such interactions are very different even though they can give rise to similar pseudogaps; strong electron−phonon coupling and charge−lattice distortions support polaronic and CDW orders, while electron−electron interactions support Luttinger-liquid behavior.…”

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confidence: 99%

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Bipolaronic Nature of the Pseudogap in Quasi-One-Dimensional (TaSe₄)₂I Revealed via Weak Photoexcitation

Zhang,

Murthy,

Kafle

et al. 2023

Nano Lett.

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The origin of the pseudogap in many strongly correlated materials has been a longstanding puzzle. Here, we present experimental evidence that many-body interactions among small Holstein polarons, i.e., the formation of bipolarons, are primarily responsible for the pseudogap in (TaSe4)2I. After weak photoexcitation of the material, we observe the appearance of both dispersive (single-particle bare band) and flat bands (single-polaron sub-bands) in the gap by using time- and angle-resolved photoemission spectroscopy. Based on Monte Carlo simulations of the Holstein model, we propose that the melting of pseudogap and emergence of new bands originate from a bipolaron to single-polaron crossover. We also observe dramatically different relaxation times for the excited in-gap states in (TaSe4)2I (∼600 fs) compared with another 1D material Rb0.3MoO3 (∼60 fs), which provides a new method for distinguishing between pseudogaps induced by polaronic or Luttinger-liquid many-body interactions.

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Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H−MoTe2

Cited by 15 publications

References 48 publications

Recent Progress on Two-Dimensional Materials

Recent Progress on Two-Dimensional Materials

Ultrafast carrier dynamics in vanadium-doped MoS₂ alloys

Bipolaronic Nature of the Pseudogap in Quasi-One-Dimensional (TaSe₄)₂I Revealed via Weak Photoexcitation

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Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H−MoTe2

Cited by 15 publications

References 48 publications

Recent Progress on Two-Dimensional Materials

Recent Progress on Two-Dimensional Materials

Ultrafast carrier dynamics in vanadium-doped MoS2 alloys

Bipolaronic Nature of the Pseudogap in Quasi-One-Dimensional (TaSe4)2I Revealed via Weak Photoexcitation

Contact Info

Product

Resources

About

Ultrafast carrier dynamics in vanadium-doped MoS₂ alloys

Bipolaronic Nature of the Pseudogap in Quasi-One-Dimensional (TaSe₄)₂I Revealed via Weak Photoexcitation