2011
DOI: 10.1103/physrevb.83.075402
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Metal-insulator transition of the LaAlO3-SrTiO3interface electron system

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Cited by 47 publications
(60 citation statements)
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“…3f), we see that these densities have a universal value n C = 1.68 ± 0.18×10 13 cm − 2 independent of disorder, pointing to an intrinsic origin. The observed critical density is therefore fundamentally different from the recently determined metal-insulator transition density 26 , both in its experimental signature (below the metalinsulator transition the I-V characteristics are non-ohmic, whereas we see ohmic behaviour throughout except at the lowest densities, which are much smaller than n C ), as well as in its underlying source: the metal-insulator transition density is non-universal 26 , being set by the extrinsic disorder, whereas the critical density that we observe is universal, pointing to an intrinsic source. We argue that the observed transition is a Lifshitz transition that occurs when the density exceeds a critical value at which new bands of a different symmetry are populated.…”
Section: An Underlying Universal Lifshitz Transitionmentioning
confidence: 56%
“…3f), we see that these densities have a universal value n C = 1.68 ± 0.18×10 13 cm − 2 independent of disorder, pointing to an intrinsic origin. The observed critical density is therefore fundamentally different from the recently determined metal-insulator transition density 26 , both in its experimental signature (below the metalinsulator transition the I-V characteristics are non-ohmic, whereas we see ohmic behaviour throughout except at the lowest densities, which are much smaller than n C ), as well as in its underlying source: the metal-insulator transition density is non-universal 26 , being set by the extrinsic disorder, whereas the critical density that we observe is universal, pointing to an intrinsic source. We argue that the observed transition is a Lifshitz transition that occurs when the density exceeds a critical value at which new bands of a different symmetry are populated.…”
Section: An Underlying Universal Lifshitz Transitionmentioning
confidence: 56%
“…These phenomena emerge from the conducting state of the 2DEL, above a sharp metal-insulator transition (MIT), at a critical LAO thickness of 3 unit cells [2]. The MIT itself is quite remarkable and exhibits a temperature and electric field dependence that is distinct from ordinary semiconductors [3]. The existence of a conducting interface has been explained by a ''polar catastrophe'' model [1] in which the 2DEL forms to help screen the polarization of the LAO layer.…”
Section: Introductionmentioning
confidence: 99%
“…1 The specific interest in STO was sparked by the observation of a two-dimensional electron gas (2DEG) at a LaTiO 3 /STO interface, 2 and by subsequent observations [3][4][5][6][7][8] that these 2DEGs exhibit ferromagnetism and superconductivity. The ability to tune LAO/STO interfaces through metal-insulator and superconductor-insulator transitions by application of a gate voltage [9][10][11][12] has raised questions about the role of quantum criticality 13 and the origins of superconductivity at low electron density.…”
Section: Introductionmentioning
confidence: 99%