2017
DOI: 10.1016/j.physleta.2016.11.040
|View full text |Cite
|
Sign up to set email alerts
|

Metal mono-chalcogenides ZnX and CdX (X = S, Se and Te) monolayers: Chemical bond and optical interband transitions by first principles calculations

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

6
15
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 49 publications
(21 citation statements)
references
References 38 publications
6
15
0
Order By: Relevance
“…Previous experimental and theoretical works have investigated the structural, electronic, and chemical characteristics of a few monolayer phases of GaSe 22 , GaTe 23 , ZnSe 19,[24][25][26][27][28][29][30][31][32] , ZnTe 29,30,32 , and SiAs [33][34][35] . 2D layers of ZnSe in various structural forms have attracted attention for their photoabsorption properties 24,36 , as have low-dimensional forms of ZnTe bound to nanowires or in nanoparticle form [37][38][39] .…”
Section: Workflowmentioning
confidence: 99%
See 1 more Smart Citation
“…Previous experimental and theoretical works have investigated the structural, electronic, and chemical characteristics of a few monolayer phases of GaSe 22 , GaTe 23 , ZnSe 19,[24][25][26][27][28][29][30][31][32] , ZnTe 29,30,32 , and SiAs [33][34][35] . 2D layers of ZnSe in various structural forms have attracted attention for their photoabsorption properties 24,36 , as have low-dimensional forms of ZnTe bound to nanowires or in nanoparticle form [37][38][39] .…”
Section: Workflowmentioning
confidence: 99%
“…Low-dimensional GaSe 23,49,50 , GaTe 23 , and ZnSe 24 have all been experimentally studied with structures similar to those which we found. We are not aware of any experimental evidence of twodimensional SiAs or ZnTe, though both were featured in theoretical studies 29,30,33,34 . However, previous computational efforts considered different structural prototypes for ZnTe than in this work.…”
Section: Znte Into the Mos 2 Or H-bn Structures)mentioning
confidence: 99%
“…Many theoretical and experimental efforts have been devoted to the fabrication of ZnS materials, [22][23][24][25][26][27] particularly those formed in a twodimensional manner that enables integrated fabrication and application of ZnS-based optoelectronic devices, and may also bring about some unique properties and functions. [28][29][30][31] However, the synthesis of large-area ZnS thin films with high crystal quality still remains challenging. 32 This is due to the lack of a lattice-matched substrate, the oxidation propensity, and the high sensitivity to synthetic conditions of ZnS.…”
Section: Introductionmentioning
confidence: 99%
“…However, these meta‐stable structures could be stabilized by growing on proper substrates. In addition, Safari and co‐workers investigated the chemical bonding mechanism and optical interband transitions of ZnX and CdX using the DFT approach with mBJ‐GGA method . They found that the band gap nature of CdSe, CdTe, ZnSe, and ZnTe transformed from direct to indirect.…”
Section: Freestanding 2d Nanosheetsmentioning
confidence: 99%