Metal–n-ZnSiP2 Schottky contacts

Kühnel, G.; Siegel, W.; Ziegler, E.

doi:10.1002/pssa.2210490235

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…In the region of large positive bias, increases implying a transition to a predominant recombination mechanism [16 to 23, 31 to 331. For instance, for the Schottky diodes In-p-ZnSnP,, the I-U characteristic can be tlescribed within the framework of the thermoemission mechanism of current transport Vacuum technology of Schottky barrier deposition permitted the production of Au(Ni)-ZnSiP,-type structures with rectification up t o lo6, a better factor = 1.03 to 1.04, and reverse currents of down to A [96,971. However, the contribution of the series resistance in the crystal remains large.…”

Section: Current-roltuge Characteristicmentioning

confidence: 99%

Photoelectric anisotropy of II–IV–V2 ternary semiconductors

Medvedkin

Rud

Tairov

1989

Phys. Stat. Sol. (a)

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Section: Current-roltuge Characteristicmentioning

confidence: 99%

Photoelectric anisotropy of II–IV–V2 ternary semiconductors

Medvedkin

Rud

Tairov

1989

Phys. Stat. Sol. (a)

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“…The fundamental properties of ZnSiP 2 have been studied since the late 1950's using crystals that have been grown in a flux (typically Zn or Sn) or by halogen assisted vapor transport. 2,11,12,[19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Studies of these crystals reveal that ZnSiP 2 has a very small lattice mismatch with Si of 0.5% (Fig. 1), has a band gap of B2.1 eV, forms with minimal atomic disorder, and is structurally stable at temperatures up to 800 1C.…”

Section: Introductionmentioning

confidence: 99%

Solar energy conversion properties and defect physics of ZnSiP₂

Martinez

Warren

Gorai

et al. 2016

Energy Environ. Sci.

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Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP 2 is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP 2 photovoltaic device. We show that ZnSiP 2 has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP 2 are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP 2 and related materials as photovoltaic absorber materials. Broader ContextOf all the renewable energy technologies, solar photovoltaic electricity has one of the highest resource potentials; there is enough energy in the sunlight incident on the surface of the earth to meet the world's energy demands many times over (∼10,000:1). However, significant market penetration requires photovoltaics to be cost competitive with fossil fuels, even when unsubsidized. Currently, balance of system costs, rather than module costs, represent the majority of the total installed cost. Thus, increasing module efficiency is attractive as high efficiency cells can reduce installation size and therefore cost. Tandem photovoltaic architectures can provide a transformative boost in module efficiency over the single junction alternative due to reduced thermalization losses. Silicon photovoltaics is a well established (>90% market share), high efficiency, low cost technology that provides a crystalline template to grow top cells upon. However, the top cell material must satisfy strict requirements, including high efficiency and long reliability, or its presence will simply reduce the performance of the silicon bottom cell. The primary top cell materials considered to date include III-V materials, but the cost of these materials and their sensitivity to defects have proven challenging. In this work, ZnSiP 2 emerges as a wide band gap absorber that has the potential to meet the requirements needed for a top cell in tandem silicon-based photovoltaics. † Electronic Supplementary Information (ESI) available:

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Deep Levels in ZnSiP2 Determined by Schottky TSC Measurements

Kühnel

Siegel

Ziegler

1979

Phys. Stat. Sol. (a)

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Deep impurity levels in low-resistivity n-type ZnSiP? single crystals are investigated by thermally stimulated currents in the temperature range from 77 to 300 K. I n undoped crystals traps are detected with activation energies 0.34, 0.48, 0.54 eV and concentrations 5.6 x 1016, 2.0 x 1017, and 1.1 x 10'' ~r n -~, respectively. For the dominating level with A E , = 0.48 eV the thermal capture cross section is estimated to r s = 4 X 1O-l' om2. From different facts i t can be concluded, that the dominating level is a trapping centre for holes. For the determination of the concentration of deep impurities by TSC measurements on Schottky barriers an exact relation is given.In niederohmigen n-ZnSiP,-Kristallen werden tiefe Storstellen mit Hilfe thermisch stimuliert.er Strome im Temperaturintervall von 77 K bis Raumtemperatur untersucht. I n undotierten Kristallen werden Storniveaus zu 0.34; 0.48 und 0,54 eV mit zugehorigen Konzentrationen von 5,6 x 10x6: 2,0 x lo1? bzw. 1 , l x lOI7 nachgewiesen. Fur das dominierende Niveau mit AE, = 0,48 eV wird der thermische Einfangquerschnitt zu 4 x 10-l' cm2 abgesch&tzt. Verschiedene Fakten lassen darauf schlieaen, da13 es sich zomindest bei dem dominierenden Niveau um ein Haftzentrum fur Locher handelt. Zur Bestimmung der Konzentrstion tiefer Storstellen aus TSC-Messungen a n Schottkybarrieren wird eine exakte Beziehung angegeben.

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Metal–n-ZnSiP2 Schottky contacts

Cited by 4 publications

References 6 publications

Photoelectric anisotropy of II–IV–V2 ternary semiconductors

Photoelectric anisotropy of II–IV–V2 ternary semiconductors

Solar energy conversion properties and defect physics of ZnSiP₂

Deep Levels in ZnSiP2 Determined by Schottky TSC Measurements

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Metal–n-ZnSiP2 Schottky contacts

Cited by 4 publications

References 6 publications

Photoelectric anisotropy of II–IV–V2 ternary semiconductors

Photoelectric anisotropy of II–IV–V2 ternary semiconductors

Solar energy conversion properties and defect physics of ZnSiP2

Deep Levels in ZnSiP2 Determined by Schottky TSC Measurements

Contact Info

Product

Resources

About

Solar energy conversion properties and defect physics of ZnSiP₂