Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Abrutis, A.; Lukosius, M.; Skapas, Martynas; Stanionytė, Sandra; Kubilius, V.; Wenger, Christian; Zauner, A.

doi:10.1016/j.tsf.2013.03.045

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…Thermomechanical degradation of Si/TiN/Ce Al O structures was observed by scanning electron microscopy after the annealing of the samples. Lower degradation degree was observed for structures with a thin amorphous TiN layer [149]. calculated destabilization of axial * and * antibonding interactions [153].…”

Section: Organolanthanides In Materials Sciencementioning

confidence: 93%

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Edelmann

2015

Coordination Chemistry Reviews

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Section: Organolanthanides In Materials Sciencementioning

confidence: 93%

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Edelmann

2015

Coordination Chemistry Reviews

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“…For this type of applications, there has been a vast variety of high-k perovskite oxide thin films developed, including CaCu 3 Ti 4 O 12 , [108] (Ba,Sr)TiO 3 (BST), [109] (Pb,La)TiO 3 (PLT), [110][111][112][113] LaAlO 3 , [114] CeAlO 3 , [115] BaHfO 3 , [116] and BaHfTiO 3 . [117] Thin films of ferroelectric perovskite-based oxides such as BaTiO 3 , [52] PbTiO 3 , [118] PZT, [118] Pb(Mg 1/3 Nb 2/3 )O 3 (PMN), [119] (Pb 1−x La x )TiO 3 (PLT), [113,120] SrTiO 3 , [121,122] KNbO 3 , [123,124] SrBi 2 Ta 2 O 9 (SBT), [125] and (K x Na 1−x )NbO 3 (KNN) [126] have been successfully deposited on a variety of substrates, including Pt(111)/SiO 2 /Si, Pt(100)/MgO(100), Pt/Ti/SiO 2 /Si multilayers or simple (100)-Silicon wafers.…”

Section: Mocvd Growth Of Perovskites On Non-single Crystal Substratesmentioning

confidence: 99%

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

Presti

Pellegrino

Malandrino

2022

Adv Materials Inter

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Perovskite oxide type materials exhibit a great profusion of unique functional properties and for this reason they have been named inorganic chameleon. Nevertheless, their actual applications require the availability of these systems in thin‐film form synthesized through a simple, scalable, and straightforward technique. Metal‐organic chemical vapor deposition (MOCVD) has been shown to be an outstanding process to prepare thin films of multi‐component oxides. Herein, the focus is devoted to oxide perovskite thin films on both single crystal and non‐single crystal substrates through MOCVD processes. This study discusses the principles and the basic rules governing conventional, plasma‐enhanced, and liquid‐assisted MOCVD processes. Among a plethora of oxide perovskites, several classes of functionalities belonging to the perovskite class: from superconductors to dielectrics and giant‐k dielectrics, from colossal magnetoresistance to ionic conductors, piezoelectrics and ferroelectrics, are explored in detail.

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“…The CeO2-Al2O3 system has been extensively investigated as for the catalytics (15) and ferroelectric application (16). For the high-k dielectrics in electron devices, however, crystalline structure and its relation to the electrical properties are not fully understood (17).…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Al₂O₃ Incorporated CeO₂ Thin Films Deposited by RF Magnetron Sputtering

et al. 2016

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The Al2O3 incorporated CeO2 thin films (Al2O3 molar fraction of 0.0 to 0.6) were prepared by the RF magnetron sputtering with the combinatorial mask system using the two targets of Al2O3 and CeO2 in Ar + 10% O2. The deposited films were annealed in N2 and O2 at 500°C for 30 minutes. The minimum leakage current density of 1.6 x 10-8 A/cm2 measured at the electric field of 1MV/cm was obtained for the N2 annealed sample with the Al2O3 incorporation of 0.2, which value was significantly lower than that of the film without the Al2O3 incorporation by two orders of magnitude. The variation of the flat band voltage with the incorporated Al2O3 molar fraction suggested the generation of the fixed positive charge, which was probably arisen from the lower Ce oxide in the film and/or the lower oxide of Si diffused from the substrate into the film.

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Cited by 5 publications

References 7 publications

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

Electrical Properties of Al₂O₃ Incorporated CeO₂ Thin Films Deposited by RF Magnetron Sputtering

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Cited by 5 publications

References 7 publications

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

Electrical Properties of Al2O3 Incorporated CeO2 Thin Films Deposited by RF Magnetron Sputtering

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Electrical Properties of Al₂O₃ Incorporated CeO₂ Thin Films Deposited by RF Magnetron Sputtering