Metal‐organic vapor phase epitaxial growth of cubic Gallium selenide, Ga₂Se₃

Abstract

We present results of a study using metal-organic vapor phase epitaxy (MOVPE) to synthesize thin films of cubic GazSe3 on both nearly lattice matched GaP and mismatched GaAs substrates. We find that trimethylgallium (TMGa) pre-reacts with the hydride HzSe in the gas phase to yield films which are only partially epitaxial and that the combination of TMGa with ditertiarybutylselenide produces films of the best crystal quality under steady state flow conditions. We also show that GaAs is an unsuitable substrate for MOVPE growth of gallium selenide due to exchange reactions at the interface leading to poorly bonded films.

Deposition of Thin Films of Gallium Sulfide from a Novel Liquid Single-Source Precursor, Ga(SOCNEt2)3, by Aerosol-Assisted CVD

“…Other routes to III/VI semiconductors, including MOVPE, have also been reported. [16] A number of gallium chalcogenide complexes have been developed as reliable sources for the deposition of gallium sulfide films. Notably, Barron and co-workers have reported the preparation of a series of complexes with a central cubane core, and suggested that the structure of the precursor has a marked effect on the phase and morphology of the thin films deposited.…”

Unusual Binary Optical Reflectivity of Highly Structured Epitaxial Gallium Selenide Thin Films

“…Our research shows that it is possible to grow, by chemical vapor deposition, artificial ªepitaxialº thin-film surfaces of the layer-like compound GaSe [7] that behave in this manner, and that the direction of reflection can in principle be engineered to suit a given application.…”

“…The results presented here arose out of work intended to produce epitaxial thin films of the cubic compound semiconductor Ga 2 Se 3 on nearly lattice-matched gallium phosphide substrates, [7] using metal±organic vapor phase epitaxy (MOVPE) as the deposition technique. We have also found it possible to grow ªepitaxialº films of the layer-like compound GaSe on GaP substrates.…”

“…Full details of the growth of Ga±Se compounds by MOVPE have been reported by us before. [7] The appearance of these films depends on the orientation of the wafer with respect to incident light. The films are very easily marked or scratched, but with fresh films a view along the wafer normal gives the appearance of a mat, dark reddish-brown as shown in Figure 1a, where a vertically mounted light box is used to provide illumination from the left and the wafer has been mounted on a glass slide.…”

“…[7,8] To obtain well-defined and highly crystallized particles, the solutions are heated to 65±100 C. One of the advantages of this technique is the ability to produce of large amounts of material, which is important for technical applications. Control of the particle size is obtained by changing the base involved in the chemical reactions, the pH, or other variables.…”