Metal‐Organic Vapor Phase Epitaxy Growth of GaN Nanorods

Eymery, J.

doi:10.1002/9781118984321.ch10

Wide Band Gap Semiconductor Nanowires 1 2014

DOI: 10.1002/9781118984321.ch10

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Metal‐Organic Vapor Phase Epitaxy Growth of GaN Nanorods

J. Eymery¹

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Cited by 2 publications

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“…A Si-rich layer at the sidewalls (in this case SiN) was already reported by Tessarek et al [13] for self-organized grown GaN rods. A patent by Eymery et al [19] describes the in situ fabrication of a thin SiN x layer on GaN wire sidewalls and the capability of using this layer as a passivation [20] or insulation layer for device fabrication.…”

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confidence: 99%

Growth mechanisms of GaN microrods for 3D core–shell LEDs: The influence of silane flow

Hartmann

Wang

Schuhmann

et al. 2015

Physica Status Solidi (a)

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The three-dimensional growth of GaN structures as a basis for the fabrication of 3D GaN core-shell LEDs has attracted substantial attention in the past few years. GaN nanorods or microrods with high aspect ratios can be grown by selective area epitaxy on a GaN buffer through a SiO x mask. It has been found earlier that silane substantially initiates vertical growth, with the exact underlying mechanisms being still unclear. Here, the influence of silane on the 3D GaN column growth was investigated by performing detailed growth experiments in combination with a thorough surface analysis in order to get insight into these mechanisms. The vertical growth rate is significantly enhanced by high silane fluxes, whereas the saturation of growth rate with the time is reduced. Thus, homogenous GaN columns with an aspect ratio of more than 35 could be achieved. A thin Si-rich layer on the non-polar m-plane facets of the columns has been detected using a combination of transmission electron microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. This layer is suggested to be the reason for the increase in growth rate, modifying the effective collection range of the species along the sidewalls, and preventing the lateral growth.

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mentioning

confidence: 99%

Growth mechanisms of GaN microrods for 3D core–shell LEDs: The influence of silane flow

Hartmann

Wang

Schuhmann

et al. 2015

Physica Status Solidi (a)

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Mask-free three-dimensional epitaxial growth of III-nitrides

et al. 2020

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A novel catalyst-free and maskless growth approach is presented to form an ordered geometrical array of three-dimensional (3D) AlGaN/AlN microrods. The growth method is composed of a single growth step using metalorganic vapor phase epitaxy, achieving microstructures with homogeneous diameters, shapes and sizes over relatively large scale (on 2-in. wafer). The 3D AlGaN/AlN heterostructures are grown in a form of micro-sized columns elongated in one direction perpendicular to the substrate surface and with a hexagonal cross section. A careful examination of growth steps revealed that this technology allows to suppress coalescence and lateral overgrowth, promoting vertical 3D growth. Interestingly, two distinct morphologies can be obtained: honeycomb-like hexagonal arrangement perfectly packed and with twisted microrods layout, by controlling strain state in AlN buffer layers. Consequently, 3D AlGaN microrods on tensile-strained AlN templates show a 0° twisted morphology, while on compressive-strained templated a 30° twisted arrangement. Moreover, the optical and crystalline quality studies revealed that the top AlGaN layers of the examined 3D semiconductor structures are characterized by a low native point-defect concentration. These 3D AlGaN platforms can be applied for light emitting devices or sensing applications. Graphic abstract

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Metal‐Organic Vapor Phase Epitaxy Growth of GaN Nanorods

Cited by 2 publications

References 91 publications

Growth mechanisms of GaN microrods for 3D core–shell LEDs: The influence of silane flow

Growth mechanisms of GaN microrods for 3D core–shell LEDs: The influence of silane flow

Mask-free three-dimensional epitaxial growth of III-nitrides

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