Metal Organic Vapor Phase Epitaxy

Herman, Marian A.; Richter, Wolfgang; Sitter, H.

doi:10.1007/978-3-662-07064-2_8

Cited by 2 publications

(1 citation statement)

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“…Typical values are in the range of tens of mbar, which is about 3 orders of magnitude higher than in PLD and 9 orders higher than in MBE. The combination of these characteristics of the MOCVD method enables the growth of epitaxial films of high structural perfection 27 with stoichiometric, as well as intentional off-stoichiometric composition while maintaining the perovskite structure without foreign phases. Defined cation deviations from stoichiometry with almost full oxygen-site occupancy can be independently realized with this growth method.…”

Section: Introductionmentioning

confidence: 99%

Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy

Baki

Stöver

Schulz

et al. 2021

Sci Rep

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Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE). Exploiting the advantage of adjusting the partial pressures of the individual constituents independently, we tuned the Sr/Ti ratio of the gas phase for realizing, stoichiometric, as well as Sr deficient layers. Quantitative energy dispersive X-ray spectroscopy in a scanning transmission electron microscope confirm Sr deficiency of up to 20% in nominally off-stoichiometrically grown films. Our MOVPE process allows to grow such layers in phase pure state and without extended defect formation. Indications for oxygen deficiency could not be identified. Sr deficient layers exhibit an increased permittivity of ɛr = 202 and a larger vertical lattice parameter. Current–voltage characteristics (IVCs) of metal–oxide–semiconductor (Pt/SrTiO3/SrTiO3:Nb) structures reveal that Sr deficient SrTiO3 films show an intrinsic resistive switching with on–off ratios of three orders of magnitude at RT and seven orders of magnitude at 10 K. There is strong evidence that a large deviation from stoichiometry pronounces the resistive switching behavior. IVCs conducted at 10 K indicate a defect-based mechanism instead of mass transport by ion diffusion. This is supported by in-situ STEM investigations that show filaments to form at significant higher voltages than those were resistive switching is observed in our samples.

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Section: Introductionmentioning

confidence: 99%