Metal Oxide Nanoparticle Photoresists for EUV Patterning

Self Cite

Metal containing non-chemically amplified EUV resists have gained growing attention in recent years due to superior line space patterning performance, high etch resistance and ultrahigh sensitivity. Their favorable performance and sensitivity are believed to correlate with metals-light interactions. However, there is very few report of metal containing resists on EUV contact holes patterning. In this work, we study an alternative type metal containing resist, which utilizes conventional CAR with metal salts as sensitizer. CAR with metal sensitizer has shown enhanced sensitivity and slightly increase LCDU, yet reduced LWR is also observed in some cases. Therefore, this work is dedicated to studying the influences of metal sensitizer on resist physical properties and the underlying sensitivity enhancement mechanism.

Section: Introductionmentioning

confidence: 99%

Metal Sensitizer in Chemically Amplified EUV Resist: a Study of Sensitivity Enhancement and Dissolution

Jiang¹,

Simone²,

Vandenberghe³

2017

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“…Previous studies showed the sensitivity of a resist can be varied by changing the binding strength of ligands [8][9][10]. In this paper, we will continue to discuss EUV performance of ONE resists with new ligands and patterning mechanism in depth.…”

Section: Introductionmentioning

confidence: 99%

Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism

Jiang

Zhang

et al. 2015

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In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.

“…Especially, the high sensitivity is strongly required to relax the specification of EUV light power and maintain the high-lithographic throughput. To achieve the high sensitive resist, some groups reported several methods in the paper [3,4]. The key to increase the sensitivity is employing the high-EUV-absorption-metal material such as hafnium or zirconium in the base resin of EUV resist.…”

Section: Introductionmentioning

confidence: 99%

Development of the Transmittance Measurement for EUV Resist by Direct-Resist Coating on a Photodiode

Mamezaki

Watanabe

Harada

et al. 2016

To increase the sensitivity of extreme-ultraviolet (EUV) resist, the method of adding high absorption material in base resin of the resist such as hafnium or zirconium metal has been developed. Since the EUV absorption of the base resin increases, the secondary electron emissions would increase to have a highresist-exposure sensitivity. Thus to achieve the high sensitive EUV resist, it is important to evaluate EUV absorption of the EUV resist precisely. We have developed a novel transmittance measurement method to evaluate EUV resist absorption with high precision at BL10 beamline of NewSUBARU synchrotron light facility. In this novel method, a sample resist was coated on an EUV photodiode directly. The EUV transmittance of the resist was measured with photodiode signals before and after the coating. The resist thickness uniformity coating on a photodiode has much smaller value compared to that coating on a freestanding membrane. By novel method, the measurement precisions of the resist thickness and the EUV transmittance were significantly improved. As the result, the high measurement precision of absorption coefficient of 1% was achieved. This novel method will help the development of high sensitive EUV resist with the high-absorption material.