Metal oxide-resistive memory using graphene-edge electrodes

Abstract

The emerging paradigm of ‘abundant-data' computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data applications with the required throughput and energy efficiency. The next technology frontier will be monolithically integrated chips with three-dimensionally interleaved memory and logic for unprecedented data bandwidth with reduced energy consumption. In this work, we exploit the atomically thin nature of the graphene edge to assemble a resistive memory (∼3 Å thick) stacked in a vertical three-dimensional structure. We report some of the lowest power and energy consumption among the emerging non-volatile memories due to an extremely thin electrode with unique properties, low programming voltages, and low current. Circuit analysis of the three-dimensional architecture using experimentally measured device properties show higher storage potential for graphene devices compared that of metal based devices.

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

“…Recently, 2D graphene with high electronic conductivity and excellent impermeability has been utilized as an interface layer to improve RS properties, such as low dissipation, multilevel storage, and endurance stability . Besides, graphene in the RRAM structure can depress the physical and electrochemical exchange of atoms/ions from both sides and even transforms the RS mechanism from valence change mechanism (VCM) to electrochemical metallization (ECM) by inhibiting the oxygen evolution reactions .…”

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

“…However, Flash memories continue to suffer from low endurance, low write speed and high voltage in write process [1,2]. Under the circumstances, the resistive switching memory which based on resistance change modulated by electrical stimulus, has inspired both scientific and commercial interest due to its excellent area compaction (4F 2 , where F is minimal feature size), high switching speed (<100 ps) [3], high endurance (>10 12 cycles) [4], good retention (>10 years@85°) [5][6][7][8] and low power consumption (~1 µW) [9]. Numerous theoretical models and experiments have been proposed to explain the resistive switching behavior in various materials ranging from rare-earth oxides (e.g., YCrO3 [10] and LaLuO3 [11]), phase-change chalcogenides (e.g., Ge2Sb2Te5), solid-state electrolytes (e.g., Au/Cu in GeSe) to transition metal oxide (e.g., TiO2 and SrTiO3) [12].…”

Research progresses of resistive random access memory

“…器件从而提高及拓展器件性能的想法正越来越受到 研究人员的重视 [155][156][157][158] . 石墨烯通常可以用作RRAM 的 电 极 [159][160][161] 、 纳 米 尺 寸 电 极 [162,163] 或 者 侧 边 电 极 (图5) [164,165] , 也可以用作电极与阻变层之间的界面插 层 [166][167][168][169] , 具有纳米孔洞的石墨烯可以用来实现导电 细丝的限域生长 [170,171] , 还可以通过在石墨烯中形成纳 米缝隙构造RRAM器件 [172] . 石墨烯RRAM器件的主要 叠能力.…”

“…中国科学: 物理学 力学 天文学 2016年 第46卷 第10期 107311-网络版彩图)采用石墨烯作为侧边电极的三维交叉 点结构RRAM器件. (a) 多层RRAM器件的结构示意图; (b) 单层RRAM器件的横截面结构示意图; (c) 两层堆叠RRAM 结构的高分辨透射(TEM)电镜照片; (d), (e) 第一和第二层器 件的TEM照片[165]…”