Metal Oxide Thin-Film Transistors from Nanoparticles and Solutions

Busch, C.; Bubel, Simon; Theissmann, Ralf; Schmechel, Roland

doi:10.1007/978-3-642-28546-2_15

Nanoparticles From the Gasphase

2012

DOI: 10.1007/978-3-642-28546-2_15

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Metal Oxide Thin-Film Transistors from Nanoparticles and Solutions

C. Busch

Simon Bubel

Ralf Theissmann

et al.

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2013

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Cited by 2 publications

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“…10 The film thickness was d ¼ 5 nm and the roughness was Ra ¼ 0.35 nm. Additional information can be found in the previous publications 10, [41][42][43] and supplementary material. 25 Bottom gate TFTs on Si/SiO 2 [200 nm] had a channel ratio W/L ¼ 7 mm/100 lm.…”

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confidence: 99%

Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

Bubel

Meyer

Kunze

et al. 2013

Applied Physics Letters

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Articles you may be interested inModel for determination of mid-gap states in amorphous metal oxides from thin film transistors Trap states and space charge limited current in dispersion processed zinc oxide thin films Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature Appl. Phys. Lett. 96, 222101 (2010); 10.1063/1.3429586 Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors

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mentioning

confidence: 99%

Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

Bubel

Meyer

Kunze

et al. 2013

Applied Physics Letters

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show abstract

Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

Bubel

Chabinyc

2013

Journal of Applied Physics

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The electronic density of states in metal oxide semiconductors like amorphous zinc oxide (a-ZnO) and its ternary and quaternary oxide alloys with indium, gallium, tin, or aluminum are different from amorphous silicon, or disordered materials such as pentacene, or P3HT. Many ZnO based semiconductors exhibit a steep decaying density of acceptor tail states (trap DOS) and a Fermi level (EF) close to the conduction band energy (EC). Considering thin film transistor (TFT) operation in accumulation mode, the quasi Fermi level for electrons (Eq) moves even closer to EC. Classic analytic TFT simulations use the simplification EC−EF> ‘several’kT and cannot reproduce exponential tail states with a characteristic energy smaller than 1/2 kT. We demonstrate an analytic model for tail and deep acceptor states, valid for all amorphous metal oxides and include the effect of trap assisted hopping instead of simpler percolation or mobility edge models, to account for the observed field dependent mobility.

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Metal Oxide Thin-Film Transistors from Nanoparticles and Solutions

Cited by 2 publications

References 71 publications

Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

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