2022
DOI: 10.1016/j.optmat.2022.112734
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Metal oxides as buffer layers for CZTS based solar cells: A numerical analysis by SCAPS-1D software

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Cited by 26 publications
(17 citation statements)
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“…The optimizing thickness of the buffer layer in the CTZ system is 0.1 μm $\text{μm}$ , in CMZ, it is 0.2 μm $\text{μm}$ , and in the CWZ system is 0.02 μm $\text{μm}$ . [ 29,36–38 ] Mo/MoS 2 /CZTS/ZnO/i‐ZnO/n‐ZnO is proposed by Al Zoubi et al, in which a ZnO buffer layer is used, and their subsequent exploration of the distinctive parameters of the absorber and buffer layer such as thickness, bandgap energy, and carrier concentration. Figure 5 displays all the results.…”
Section: Metal Oxide Buffer Layer Of Czts Solar Cellmentioning
confidence: 99%
“…The optimizing thickness of the buffer layer in the CTZ system is 0.1 μm $\text{μm}$ , in CMZ, it is 0.2 μm $\text{μm}$ , and in the CWZ system is 0.02 μm $\text{μm}$ . [ 29,36–38 ] Mo/MoS 2 /CZTS/ZnO/i‐ZnO/n‐ZnO is proposed by Al Zoubi et al, in which a ZnO buffer layer is used, and their subsequent exploration of the distinctive parameters of the absorber and buffer layer such as thickness, bandgap energy, and carrier concentration. Figure 5 displays all the results.…”
Section: Metal Oxide Buffer Layer Of Czts Solar Cellmentioning
confidence: 99%
“…There are still possibilities intended to further development of the outputs of CZTS PV cells according to the Shockly–Queisser limit 47 . In the previous works, remarkable improvement in the PV performances of TFSCs is realized by swapping the conventional toxic CdS buffer layer with nontoxic buffer materials 48,49 . In the present research, we have employed the tungsten disulfide (WS 2 ) as a buffer layer substitute to the traditional CdS buffer with the CZTS absorber.…”
Section: Introductionmentioning
confidence: 99%
“…47 In the previous works, remarkable improvement in the PV performances of TFSCs is realized by swapping the conventional toxic CdS buffer layer with nontoxic buffer materials. 48,49 In the present research, we have employed the tungsten disulfide (WS 2 ) as a buffer layer substitute to the traditional CdS buffer with the CZTS absorber. Due to excellent optoelectronic and electro-chemical properties, the WS 2 as a buffer layer alternative to CdS buffer has previously been utilized in the CIGS and CdTe TFSCs.…”
Section: Introductionmentioning
confidence: 99%
“…Due to their high aspect ratio and large surface area, 1D nanostructures have much better sensing performance than thin films. , They have a higher sensitivity, a more comprehensive limit of detection, a lower ambient operating temperature, and a faster response. , Tungsten oxide (WO 3 ) NRs and hydrogen titanate nanotubes (HTNTs) show excellent mechanical strength and elasticity. Tungsten oxide usually is an n-type semiconductor having a bandgap (2.6–3.0) eV . The major challenge with tungsten oxide is its poor electrical conductivity and its instability in the aqueous solution .…”
Section: Introductionmentioning
confidence: 99%
“…Tungsten oxide usually is an n-type semiconductor having a bandgap (2.6−3.0) eV. 15 The major challenge with tungsten oxide is its poor electrical conductivity 16 and its instability in the aqueous solution. 17 The fabrication process of such metal oxide-based sensors is a bit delicate as their properties depend on synthesis and deposition processes.…”
Section: ■ Introductionmentioning
confidence: 99%