Nanostructures of II-VI semiconductor materials could potentially offer novel and superior physical (in particular, optoelectronic) properties with respect to their bulk counterparts. Herein, we present our most recent research on several II-VI and related nanostructures grown by molecular beam epitaxy (MBE) technique. These include a ZnSe nanograting. This nanograting structure was realized at the surface of Fe/ZnSe bilayers grown on GaAs(001) substrates by thermal annealing. A model based on an Ewald construction is presented to explain its unusual reflection high-energy electron diffraction (RHEED) patterns. The formation mechanism of this one-dimensional (1D) nanostructure is possibly related to surface energy minimization, together with an Fe-Se exchange interaction and Fe-induced decomposition of several top ZnSe atomic layers during thermal annealing. Another nanostructure investigated was the ZnS Schottky barrier embedded with Fe quantum dots (QDs). Here, a Au/ZnS/Fe-QDs/ZnS/n + -GaAs(100) Schottky barrier structure containing five layers of spherical Fe quantum dots with a diameter of $3 nm was fabricated. Its I-V characteristic measured from 5 K to 295 K displays negative differential resistance (NDR) for temperature £50 K. Staircase-like I-V characteristics were also observed at low temperature in some devices fabricated from this structure. Possible mechanisms that can account for the observed unusual I-V characteristic in this structure are presented. Finally, laterally grown Fe nanowires (NWs) on a ZnS surface were prepared. Under high growth/annealing temperature, two types of Fe NWs with specific orientations can be grown on the ZnS(100) surface. We propose a mean-field model that the torque exerted by type A Fe NWs could effectively turn the two components of type B Fe NWs slightly toward the ZnS [110] direction, leading to the observed misalignment of type B Fe NWs.
ZnSe NANOGRATINGRecently, a number of self-assembly techniques have been used in the fabrication of low-dimensional structures such as quantum dots and nanowires. 1,2 These techniques enjoy the advantages of being able to achieve a true nanosize scale of the nanostructures and most importantly large product area by an in situ non-time-consuming fabrication process. In recent years, using state-of-the-art molecular beam epitaxy (MBE) technique, we have been able to study the growth mechanism and/or quantum size effects of several self-assembled nanostructures. 3-5 Herein, we report a novel approach for fabricating a highly aligned nanograting structure on a ZnSe(001) surface by thermal annealing an Fe/ZnSe bilayer grown on a GaAs(001) substrate.In this study, three samples were fabricated on GaAs(001) substrates using a VG V80H MBE system. The substrate of sample I1 was first deoxided at 580°C, and then a thin ZnSe film ($30 nm) was deposited at 250°C using a ZnSe compound effusion