Metal Schottky diodes on Zn-polar and O-polar bulk ZnO

Allen, Martin W.; Alkaisi, Maan M.; Durbin, Steven M.

doi:10.1063/1.2346137

Cited by 148 publications

(81 citation statements)

References 13 publications

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“…The central axis of the nanowire remained neutral. In addition to Pt, ZnO has been reported to form Schottky diodes with a variety of metals, such as Ag [532], Au [533], Pd [534], and Ni [534]. Surface treatment can effectively improve the diode performance [535,536].…”

Section: Atomic Force Microscopy-based Nanogeneratorsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Atomic Force Microscopy-based Nanogeneratorsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…4 ZnO nanorod (NR) polarity has no influence on the Au Schottky contacts. Several groups have reported on the polarity effect; for example, Allen et al reported that there is no significant polarity effect on the Au Schottky contacts on ZnO, 18 while Mosbacker et al reported that the Au Schottky contacts on ZnO are almost identical on both the Zn-and O-polar faces, and that the Au Schottky contacts are independent of both the surface polarity and the material quality. 4 In this work, we investigate the interface traps and the electrical properties of fabricated ZnO NR-based Schottky diodes by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f), and conductance-frequency (G p /x-x) measurements.…”

Section: Introductionmentioning

confidence: 99%

Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

Hussain

Soomro

Bano

et al. 2012

Journal of Applied Physics

109

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Schottky diodes with Au/ZnO nanorod (NR)/n-SiC configurations have been fabricated and their interface traps and electrical properties have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f), and conductance-frequency (G p /x-x) measurements. Detailed and systematic analysis of the frequency-dependent capacitance and conductance measurements was performed to extract the information about the interface trap states. The discrepancy between the high barrier height values obtained from the I-V and the C-V measurements was also analyzed. The higher capacitance at low frequencies was attributed to excess capacitance as a result of interface states in equilibrium in the ZnO that can follow the alternating current signal. The energy of the interface states (E ss ) with respect to the valence band at the ZnO NR surface was also calculated. The densities of interface states obtained from the conductance and capacitance methods agreed well with each other and this confirm that the observed capacitance and conductance are caused by the same physical processes, i.e., recombination-generation in the interface states. V C 2012 American Institute of Physics.

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“…Previous work has largely been phenomenological in nature or has focused on the presence of interfacial contamination. [5][6][7][8][9][10][11] Few studies have tried to understand the role of subsurface or bulk states in the semiconductor, or the effect of mobile contaminants such as Li or H. [12][13][14] Through the use of in situ plasma cleaning and metal deposition, we have been able to show that surface contamination, bulk states, and states near the surface, as well as hydrogen, affect electrical contacts in ZnO. [12][13][14] In this article, we extend these themes and measure the effect of each contribution on Schottky barrier ͑SB͒ formation at the metal-ZnO interface.…”

Section: Introductionmentioning

confidence: 99%

Role of subsurface defects in metal-ZnO(0001¯) Schottky barrier formation

Mosbacker

Hage

González

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors fabricated diodes of Au, Al, Ni, Pt, Pd, Mo, Ta, and Ir on single crystal ZnO͑0001͒ surfaces from different vendors and measured their Schottky barriers, idealities, and reverse currents on as-received and remote oxygen ͑20% O 2 /80%He͒ plasma-treated surfaces. Using low temperature nanoscale depth-resolved cathodoluminescence spectroscopy ͑DRCLS͒ under the metal, the authors identified the presence of defect transitions at 2.1, 2.5, and 3.0 eV that change dramatically depending on the process steps and choice of metal. I-V measurements exhibited transitions from Ohmic to Schottky and lower idealities for Pt, Au, Ir, and Pd with plasma treatment. ZnO with low defect densities yield lower idealities and reverse currents. Deep level optical and transient spectroscopies correlated bulk and surface defects, showing deep levels at 2.54 and 0.53 eV, while DRCLS shows that these densities can increase by Ͼ100 times at the surface. The magnitude of the metal's influence correlates directly to the relative defect concentrations near the surface and in the bulk. These results show that metals can induce defect states at the metal-semiconductor interface and impact device performance.

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Metal Schottky diodes on Zn-polar and O-polar bulk ZnO

Cited by 148 publications

References 13 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

Role of subsurface defects in metal-ZnO(0001¯) Schottky barrier formation

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