Metal-semiconductor-metal heterojunction diodes consisting of a thin layer of crystal silicon

Hussin, Rozana; Chen, Yixuan; Luo, Yi

doi:10.1063/1.4794421

Cited by 13 publications

(5 citation statements)

References 16 publications

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“…The red curves in Figure 1 b clearly deviate from linear behavior. As mentioned in the beginning, for most thin films and bulk surfaces, the dominant current injection mechanism is thermionic emission, 40 , 41 , 51 , 52 which is contrary to DT being the dominant injection mechanism in our VO 2 thin films. In general, DT and F–N are the dominant current injection mechanisms in nanosheets or two-dimensional materials.…”

Section: Results and Discussionmentioning

confidence: 76%

High-Strain-Induced Local Modification of the Electronic Properties of VO₂ Thin Films

Birkhölzer

Sotthewes

Gauquelin

et al. 2022

ACS Appl. Electron. Mater.

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Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor–metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic distortions, as well as the symmetry change and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue toward mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2–metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surface layer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.

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Section: Results and Discussionmentioning

confidence: 76%

High-Strain-Induced Local Modification of the Electronic Properties of VO₂ Thin Films

Birkhölzer

Sotthewes

Gauquelin

et al. 2022

ACS Appl. Electron. Mater.

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“…Table summarizes the performance comparison of our work against other rectifier devices, including MIM diode, ,− MIIM diode, − and MSM diode. − It is clear that the Pt/ZnO/TiN nanoscale tunneling junction proposed in this work shows the highest current rectification ratio of more than 4 orders with a large forward current density of more than 10 A/cm 2 .…”

Section: Resultsmentioning

confidence: 93%

Ultrahigh Rectification Ratio in an Asymmetric Metal/Semiconductor/Metal Nanoscale Tunneling Junction: Implications for High-Frequency Rectifiers

Feng

et al. 2023

ACS Appl. Nano Mater.

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The ultrafast quantum-based electron-transport mechanism with a typical tunneling time of femtoseconds is appealing to fabricate high-frequency rectifier diode devices for applications such as solar energy harvesting, THz mixers, and infrared detectors. Here, we demonstrate an ultrahigh rectification of more than 10 4 and a large forward current density of 13.8 A/cm 2 at −2 V in the structure of a metal/semiconductor/metal (MSM, Pt/ZnO/TiN) nanoscale tunneling junction. Technology computer-aided design (TCAD) simulations demonstrate that high rectification originates from the switching of the electron-transport mechanism between direct tunneling (DT) and Fowler−Nordheim tunneling (FNT) under positive and negative voltage biases, respectively. The quantum-based FNT mechanism gives very slight temperature dependence of currents in a wide temperature range of 100−400 K. This work opens an avenue for high-frequency rectifier diodes based on MSM nanoscale tunneling junctions.

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“…Usually, the current of the MSM devices increases exponentially with the applied voltage and may be fitted by the diode current equation (1), which suggests a thermionic emission at the metal-semiconductor heterointerface [28], [30]:…”

Section: A Current-voltage Characteristicsmentioning

confidence: 99%

High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction

Kumar

Lin

2023

IEEE Photonics J.

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In this work, we propose the lateral metal-germanium-metal photodetectors (PDs) structure on the silicon-oninsulator platform for short-wave infrared (SWIR) applications. The proposed device utilizes the highly n-doped amorphous silicon (a-Si:H) interlayer between metallic contact and low n-doped germanium active region to achieve a low dark current. Additionally, the tuning of Schottky barrier height (SBH) by the selection of various metallic contacts (Cr/W/Mo) has been investigated in order to achieve a large reduction in dark current. With a-Si:H interlayer and Mo metallic contacts at both anode and cathode terminals, the simulated energy band diagram shows that an effective increase in SBH of 0.17 eV and 0.766 eV for electrons and holes, respectively, and thus acts as barriers for electron and hole dark currents. The result shows that the Mo metallic contact device manifests the least dark current (dark current density) of 0.27 pA (0.027 mA/cm 2 ) at V bias of 0.25 V and compared to Cr contact, it has been significantly decreased by two orders of magnitude. In addition, with Mo contact, the proposed device achieves the photogenerated-to-dark current (I ph /I dark ) ratio and the responsivity of ∼ 1.7 × 10 6 and 0.96 A/W, respectively at λ = 1.55 µm with V bias of 0.25 V. Furthermore, the proposed Mo-Ge-Mo PD shows high detectivity (NEP) of 9 × 10 11 cmHz 1/2 W −1 (∼ 3 × 10 −16 WHz −0.5 ), which is nearly 15 (one order lower) times higher than those of Cr-Ge-Cr PD. The results hold great potential for optoelectronic applications requiring low-power Ge-based PD.

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Metal-semiconductor-metal heterojunction diodes consisting of a thin layer of crystal silicon

Cited by 13 publications

References 16 publications

High-Strain-Induced Local Modification of the Electronic Properties of VO₂ Thin Films

High-Strain-Induced Local Modification of the Electronic Properties of VO₂ Thin Films

Ultrahigh Rectification Ratio in an Asymmetric Metal/Semiconductor/Metal Nanoscale Tunneling Junction: Implications for High-Frequency Rectifiers

High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction

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Metal-semiconductor-metal heterojunction diodes consisting of a thin layer of crystal silicon

Cited by 13 publications

References 16 publications

High-Strain-Induced Local Modification of the Electronic Properties of VO2 Thin Films

High-Strain-Induced Local Modification of the Electronic Properties of VO2 Thin Films

Ultrahigh Rectification Ratio in an Asymmetric Metal/Semiconductor/Metal Nanoscale Tunneling Junction: Implications for High-Frequency Rectifiers

High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction

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High-Strain-Induced Local Modification of the Electronic Properties of VO₂ Thin Films

High-Strain-Induced Local Modification of the Electronic Properties of VO₂ Thin Films