Metal-semiconductor transition and negative magneto-resistance in degenerate ultrathin tin oxide films

Bansal, Shikha; Kashyap, Subhash C.; Pandya, Dinesh K.

doi:10.1016/j.jallcom.2015.05.199

Cited by 8 publications

(5 citation statements)

References 26 publications

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“…In 2-D, as shown in experimental studies [21,42], the magnetoresistance at the external parallel and perpendicular fields to the film plane is the same. However, according to theoretical [43,44] and experimental studies [45,46], the magnetoresistance for parallel and perpendicular fields is anisotropic.…”

Section: Methodssupporting

confidence: 54%

“…The theory of WL is applicable for disordered materials with F kl>>1 [21]. For our case, the calculated value of k F l was 5.95.…”

Section: Methodsmentioning

confidence: 53%

“…Al doped ZnO films grown by atomic layer deposition also had a negative magnetoresistance [15]. Other thin TCO films such as indium tin oxide [16][17][18], B-doped ZnO [19], phosphorus-doped ZnO [20] and tin oxide [21,22] demonstrated a similar dependence of magnetoresistance on a magnetic field.…”

Section: Introductionmentioning

confidence: 96%

See 2 more Smart Citations

Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation

Тамбасов

Tarasov

Волочаев

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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Section: Methodssupporting

confidence: 54%

“…The theory of WL is applicable for disordered materials with F kl>>1 [21]. For our case, the calculated value of k F l was 5.95.…”

Section: Methodsmentioning

confidence: 53%

See 1 more Smart Citation

Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation

Тамбасов

Tarasov

Волочаев

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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“…Consequently, it is understandable that the WL effect as one of typical quantum transport phenomena survives at room temperature (see Figure b). Similarly, the WL effect at relatively high temperatures ( T > 100 K) has been found in ZnO-based transport systems but not discussed in detail. − In contrast, the WL effect only appears up at low temperatures ( T < 100 K) in other oxides such as In 2 O 3 , ,− SnO 2 , ,− and CdO. , In conventional nonoxide materials like AlGaAs/GaAs heterostructures, the WL effect generally appears up at cryogenic temperatures. Therefore, there may be some distinctive characters in ZnO-based systems, which is also why Zn 1– x Mg x O/ZnO heterostructures are studied in this work.…”

Section: Resultsmentioning

confidence: 99%

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures

Gao

Rong

et al. 2020

J. Phys. Chem. C

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Quantum transport phenomenon such as quantum Hall effect usually appears up at cryogenic temperature. Here, we observe a room-temperature quantum transport phenomenon in ZnO-based two-dimensional systems. We successfully fabricate Zn1–x Mg x O/ZnO heterostructures by using magnetron sputtering with a low growth temperature which makes it feasible to obtain flexible heterostructures. Electrical transport properties of these heterostructures are studied. A parabolic negative magnetoresistance is clearly observed in a wide temperature range, which can be accurately described by the weak localization theory. By analyzing the temperature dependence of the dephasing length, it is found that the electron–electron scattering combined with two-dimensional electron–phonon scattering dominates the dephasing process for electrons. Importantly, the observed negative magnetoresistance persists up to 300 K. This indicates that room-temperature weak localization effect appears up, which can be attributed to weak electron–phonon scattering and small electron mobility. The present work provides a reference for realizing room-temperature quantum effect which is beneficial to develop quantum-interference devices.

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“…In a recent study, Bansal et al . have reported a small negative magnetoresistance response at 9 kOe of ultrathin SnO 2 films at low temperatures (T < 40 K) 8 . Another report with Mn-doped ZnO films revealed large negative D.C. magnetoresistance response at 130 kOe and low temperatures (T < 20 K) in comparison with the low positive magnetoresistance observed for undoped case 9 .…”

Section: Introductionmentioning

confidence: 99%

Extremely Large Magnetic-Field-Effects on the Impedance Response of TiO2 Quantum Dots

Mombrú¹,

Romero²,

Faccio³

et al. 2019

Sci Rep

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Here, we report large magnetoresistance and magnetocapacitance response of undoped TiO 2 quantum dots weighting the contribution of both grain and grain boundaries by means of impedance spectroscopy. We also performed a complete characterization of the TiO 2 quantum dots (~5 nm) prepared by sol-gel via water vapor diffusion method, using X-ray diffraction, small angle X-ray scattering, transmission electron microscopy and Raman spectroscopy. In addition, we showed a complete theoretical study on the electronic properties of TiO 2 surface and subsurface oxygen and titanium vacancies to shed some light in their electronic and magnetic properties. Based in our study, we can conclude that the presence of defects, mainly at the grain boundary of these undoped TiO 2 quantum dots, could be responsible for the large positive magnetoresistance (+1200%) and negative magnetocapacitance (−115%) responses at low applied magnetic fields (1.8 kOe) and room temperature.

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Metal-semiconductor transition and negative magneto-resistance in degenerate ultrathin tin oxide films

Cited by 8 publications

References 26 publications

Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation

Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures

Extremely Large Magnetic-Field-Effects on the Impedance Response of TiO2 Quantum Dots

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Metal-semiconductor transition and negative magneto-resistance in degenerate ultrathin tin oxide films

Cited by 8 publications

References 26 publications

Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation

Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn1–xMgxO/ZnO Heterostructures

Extremely Large Magnetic-Field-Effects on the Impedance Response of TiO2 Quantum Dots

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Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures