Metal-silicon Schottky barriers

Schottky-barriers for clean, etched and reactive metal-semiconductor junctions

“…2) is taken equal to 2 d (see text). Notice that the charge neutrality point no longer lies in the middle of the semiconductor gap; see also figure 8. The above results can be used to discuss the experimental data of Turner and Rhoderick [17,18] for etched metal-Si(111) junctions. These authors showed how, for these junctions, the slope S increases up to 0.46.…”

“…The above results can be firstly applied to study the ageing of etched metal-Si junctions [17,18]. Notice that in this case our calculation of A by means of equation (34) is correct as the layer being built up at the interface is probably an oxide.…”

“…Nonetheless it might be reasonable to think that the changes occurring in the junction behaviour during the first stages of the reaction can be described by considering the charge rearrangement at the interface without caring about the actual electronic structure of the compound. A kind of junctions which could be considered by means of a similar scheme are those in which the semicondudtor surface has been etched before the junction is made [17]. In these junctions a rearrangement of the charge at the semiconductor surface is promoted by the reactant and then the metal is deposited on this etched surface.…”

“…Notice that in this case our calculation of A by means of equation (34) is correct as the layer being built up at the interface is probably an oxide. Turner and Rhoderick [17] figure 2. T (Fig.…”

Work Function Estimation of Bismuth Doped ZNO Thin Film

“…For a given interfacial layer thickness, (ϕ bP + ϕ bn ) =E g , due to the similarity of the surface state in p and n type Si. Using the values of q =2 x 10 12 /cm 3 for n-si wafer, δ=1.5nm and ε i =3.9, ϕ o =0.27 eV from the work reported by Turner et al [22] for metal/n-Si Schottky barrier and the work function of ZnO as calculated in this experiment by equation (3) the value of ϕ bn has been evaluated using equation (6) and has been obtained as 0.76eV. Similarly, using the values of qD s = 3 x 10 12 /cm 3 for p-Si wafer, and ϕ o = 0.33 eV from the work reported by Smith et al [23], ϕ bp has been calculated using equation (7) obtained as 0.72 eV.…”