A new
quaternary telluride, Ba4Ge2Sb2Te10, was synthesized at high temperature via the
reaction of elements. A single-crystal X-ray diffraction study shows
that the title compound crystallizes in its own structure type in
the monoclinic P21/c space
group having cell dimensions of a = 13.984(3) Å, b = 13.472(3) Å, c = 13.569(3) Å,
and β = 90.16(3)° with four formula units per unit cell
(Z = 4). The pseudo-one-dimensional crystal structure
of Ba4Ge2Sb2Te10 consists
of infinite 1
∞[Ge2Sb2Te10]8– stripes, which are separated
by Ba2+ cations. Each of the Ge(1) atoms is covalently
bonded to four Te atoms, whereas the Ge(2) atom is covalently bonded
with one Sb(2) and three Te atoms in a distorted tetrahedral geometry.
The title compound is the first example of a chalcogenide that shows
Ge–Sb bonding. The Sb(1) atom is present at the center of the
seesaw geometry of four Te atoms. In contrast, the Sb(2) atom forms
a seesaw geometry by coordinating with one Ge(2) and three Te atoms.
Condensation of these Ge and Sb centered polyhedral units lead to
the formation of 1
∞[Ge2Sb2Te10]8– stripes. The temperature-dependent resistivity study suggests the
semimetallic/degenerate semiconducting nature of polycrystalline Ba4Ge2Sb2Te10. The positive
sign of Seebeck coefficient values indicates that the predominant
charge carriers are holes in Ba4Ge2Sb2Te10. An extremely low lattice thermal conductivity of
∼0.34 W/mK at 773 K was observed for polycrystalline Ba4Ge2Sb2Te10, which is presumably
due to the lattice anharmonicity induced by the stereochemically active
5s2 lone pair of Sb. The electronic structure of Ba4Ge2Sb2Te10 and the bonding
of atom pairs in the structure have been analyzed by means of ELF
analysis and crystal orbital Hamilton population (COHP) analysis.