Metallic and Semimetallic Silicon<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo stretchy="false">⟨</mml:mo><mml:mn>100</mml:mn><mml:mo stretchy="false">⟩</mml:mo></mml:math>Nanowires

Rurali, Riccardo; Lorente, Nicolás

doi:10.1103/physrevlett.94.026805

Cited by 176 publications

(136 citation statements)

References 42 publications

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“…The pronounced differences of the surface-and bulk-disordered systems show that the conduction around the Fermi energy almost entirely takes place along the surface atoms, in qualitative agreement with the conclusions drawn in Ref. 12 Using Eq. ͑3͒ the MFP for the surface-disordered system is found to be l e = 6.4 nm.…”

Section: ͑11͒supporting

confidence: 80%

Electronic transport through Si nanowires: Role of bulk and surface disorder

et al. 2006

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We calculate the resistance and mean free path in long metallic and semiconducting silicon nanowires (SiNWs) using two different numerical approaches: A real space Kubo method and a recursive Green's function method. We compare the two approaches and find that they are complementary: depending on the situation a preferable method can be identified. Several numerical results are presented to illustrate the relative merits of the two methods. Our calculations of relaxed atomic structures and their conductance properties are based on density functional theory without introducing adjustable parameters. Two specific models of disorder are considered: Un-passivated, surface reconstructed SiNWs are perturbed by random on-site (Anderson) disorder whereas defects in hydrogen passivated wires are introduced by randomly removed H atoms. The un-passivated wires are very sensitive to disorder in the surface whereas bulk disorder has almost no influence. For the passivated wires, the scattering by the hydrogen vacancies is strongly energy dependent and for relatively long SiNWs (L > 200 nm) the resistance changes from the Ohmic to the localization regime within a 0.1 eV shift of the Fermi energy. This high sensitivity might be used for sensor applications.

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Section: ͑11͒supporting

confidence: 80%

Electronic transport through Si nanowires: Role of bulk and surface disorder

et al. 2006

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“…the reconstructed patterns and edge shapes. 5,20 In general, all the bare wires tested here have a lower band gap than the bulk limit, and any systematic size dependence is not observed. It is remarkable then that the Young's moduli fall into a single curve regardless of the existence or the magnitude of a band gap.…”

mentioning

confidence: 99%

Size-dependent Si nanowire mechanics are invariant to changes in the surface state

Lee

Rudd

2011

Phys. Rev. B

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“…In this paper we illustrate the general nature of this Knudsen effect on the effective lattice thermal conductivity of semiconductor devices by documenting the effects on two simple sample structures: thin semiconducting wire 3,15,16,17,19,20,21,48 and multilayered systems, 4,5,6,7,10,11,12,13,14,35,47 Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Phonon Knudsen flow in nanostructured semiconductor systems

Ziambaras¹,

Hyldgaard²

2006

Journal of Applied Physics

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We determine the size effect on the lattice thermal conductivity of nanoscale wire and multilayer structures formed in and by some typical semiconductor materials, using the Boltzmann transport equation and focusing on the Knudsen flow effect. For both types of nanostructured systems we find that the phonon transport is reduced significantly below the bulk value by boundary scattering off interface defects and/or interface modes. The Knudsen flow effects are important for almost all types of semiconductor nanostructures but we find them most pronounced in Si and SiC systems due to the very large phonon mean-free paths. We apply and test our wire thermal-transport results to recent measurements on Si nanowires. We further investigate and predict size effects in typical multilayered SiC nanostructures, for example, a doped-SiC/SiC/SiO 2 layered structure that could define the transport channel in a nanosize transistor. Here the phonon-interface scattering produces a heterostructure thermal conductivity smaller than what is predicted in a traditional heat-transport calculation, suggesting a breakdown of the traditional Fourier analysis even at room temperatures. Finally, we show that the effective thermal transport in a SiC/SiO 2 heterostructure is sensitive to the oxide depth and could thus be used as an in-situ probe of the SiC oxidation progress.

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Metallic and Semimetallic Silicon⟨100⟩Nanowires

Cited by 176 publications

References 42 publications

Electronic transport through Si nanowires: Role of bulk and surface disorder

Electronic transport through Si nanowires: Role of bulk and surface disorder

Size-dependent Si nanowire mechanics are invariant to changes in the surface state

Phonon Knudsen flow in nanostructured semiconductor systems

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