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Fiory, A. T.; Hebard, A. F.; Eick, R. H.; Mankiewich, P. M.; Howard, R. E.; O'Malley, M.L.

doi:10.1103/physrevlett.65.3441

Cited by 159 publications

(43 citation statements)

References 15 publications

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“…reflecting changes of n s were indeed observed by Fiory et al [7] in the first electric-field-effect experiment performed on a copper-oxide film. However, since the film thickness was much larger than the Thomas-Fermi charge screening length, the relative changes ∆L in the range 10 −4 − 10 −3 were also observed in surface impedance measurements at microwave frequencies [8], whose interpretation, however, was less transparent because of the non-linear response of the SrTiO 3 gate insulator to the applied electric field.…”

Section: +3supporting

confidence: 74%

Electrostatic Modulation of the Superfluid Density in an UltrathinLa2−xSrxCuO4Film

et al. 2006

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By capacitively charging an underdoped ultrathin La2−xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density n s of unprecedented strength were observed in measurements of the film kinetic inductance.Although n s appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation Tc ∝ n s (T = 0) in the underdoped regime of copper-oxide superconductors.PACS numbers: 74.62. Yb, 74.78.Bz, 74.25.Nf, 74.90.+n It is widely accepted that copper-oxide superconductors in the underdoped regime are doped charge transfer insulators whose properties strongly depend on the concentration of the "free" electrical carriers. If the doping level is measured by a parameter x expressing the number of free carriers per Cu site in the CuO 2 planes, in the hole-doped materials superconductivity typically sets in at x ≈ 0.05, reaches its maximum strength at x ≈ 0.15, and disappears above x ≈ 0.30. Usually, x is changed by non-isovalent chemical substitution of the antiferromagnetic insulating parent compound (x = 0): for instance, by substituting a Sr +2 ion for one of the La in the range 10 −4 − 10 −3 were also observed in surface impedance measurements at microwave frequencies [8], whose interpretation, however, was less transparent because of the non-linear response of the SrTiO 3 gate insulator to the applied electric field.In this Letter we describe an experiment in which the temperature and electric-field dependences of L −1 k were investigated by capacitively charging an epitaxially grown ultrathin (two-unit-cell-thick) LSCO film in the underdoped regime (x = 0.1) with an electrostatic field E applied across a gate insulator with a high dielectric constant. We find that the field-induced change ∆L −1 k (T, E) is a non-monotonic function of T which, for the highest fields accessible to the experiment (E ≈ 2 × 10 8 V/m), reaches a maximum corresponding to ∼ 20% of L −1 k (0, 0) at T /T c ≈ 0.7 and saturates to ∼ 10% of L −1 k (0, 0) at very low temperatures. These large modulations offer new interesting opportunities to explore the intriguing superconducting behavior of the copper oxides. As an illustration, the field-induced relative changes ∆L −1k (0, 0) measured at very low temperature were correlated, for the first time on the same sample, with the corresponding relative variations ∆T c (E)/T c (0). Both quantities were found to vary linearly with E and, quite remarkably, ∆L −1, a result providing direct compelling evidence for the validity of Uemura's relation [9] T c ∝ n s (0)/m * for underdoped copper-oxide superconductors. We consider this observation as the central result emerging from this work.To achieve a substantial electrostatic modulation of n s in a thin film, it is essential that its thickness d is of the order of the Thomas-Fermi charge screening length λ T F , the field-induced charges being confined in a layer

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Section: +3supporting

confidence: 74%

Electrostatic Modulation of the Superfluid Density in an UltrathinLa2−xSrxCuO4Film

et al. 2006

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“…[1][2][3] However, the mechanism of the electric field effect in the high-T c superconductors is controversially discussed. A widespread explanation, which applies to semiconductor field effect devices, says that the static electric field normal to the sample surface charges the input gate capacitor and directly changes the free-charge carrier concentration within the Thomas-Fermi screening length of the superconducting channel which is the base electrode of the capacitor.…”

mentioning

confidence: 99%

Temporal response of a high-T c superconducting field effect transistor

Schneider

Auer

1995

Applied Physics Letters

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YBa2Cu3O7−x/SrTiO3/Au multilayer systems have been prepared in situ by pulsed laser deposition onto (100) SrTiO3 substrates. An electric field controlled device was patterned by suitable metal masks applied successively during the deposition process. The switching time of the superconducting source-drain channel has been studied at T=4.2 K applying rectangular pulses to the gate electrode. We find that the source-drain voltage follows the gate voltage variation in accordance with the RC time constant of the device. Our result is consistent with the mechanism of direct charge transfer by the electric field, but inconsistent with a model based on electric field driven migration of the oxygen atoms in the CuO chains of YBa2Cu3O7−x which predicts characteristic times in the order of minutes.

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“…9,10 Charging a parallel plate condenser with one of the plates made of a YBCO thin film also allows one to modulate the hole concentration in the CuO 2 planes by simply applying a voltage between the condenser plates which are separated by a suitable dielectric layer. The parallel plate condenser has been realized in a couple of variants, called superconducting field effect transistor ͑SuFET͒ 11,12 and inverted metal-insulator-superconductor field effect transistor ͑MISFET͒. 13 Of course, as inferred from the denomination ''transistor,'' possible device applications of such heterostructures in cryoelectronics are very interesting as well, for instance as fast amplifying switches with a high current carrying capability in the ON state.…”

Section: Introductionmentioning

confidence: 99%