“…A description of the heat effects within the framework of the IT is based on an expression for the formation enthalpy of interstitial-type defects [11,12], H = αΩG, where the dimensionless α ≈ 1 is related to the defect strain field [18], Ω is the volume per atom and G is the unrelaxed shear modulus. The latter is related to the defect concentration c as G = µ exp(−αβc), where µ is the shear modulus of the maternal crystal (i.e., the one, which was melted and then used for glass production by melt quenching) measured at the same temperature and the dimensionless shear susceptibility β characterises the anharmonicity of the interatomic potential and by the definition equals the ratio of the fourth-order non-linear shear modulus to the second-order (i.e., "usual") shear modulus [17]. Typically, β = 15 − 20 depending on MGs' chemical composition [17].…”