Metallic Sb/GaAs core/shell nanowire as cold anti-reflective coating for optical fibres

Shukla, Rishit S.; Zala, Vidit B.; Gupta, Sanjeev K.; Gajjar, P. N.

doi:10.1016/j.matpr.2020.01.589

Cited by 9 publications

(5 citation statements)

References 19 publications

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“…Through a parametric simulation study, Shukla and coworkers investigated the optical properties of ultrathin H‐passivated Sb@GaAs core‐shell nanowire arrays (≈1.5 nm in diameter) for their suitability as an anti‐reflective coating on optical components. [ 82 ] Compared to traditional anti‐reflective indium tin oxide (ITO) coatings, nanowire array coatings of Sb@GaAs would be a cheaper and less brittle alternative. The study showed that the core‐shell Sb@GaAs nanowires had a metallic nature and possessed low IR absorbance.…”

Section: Anti‐reflective Core‐shell Micro‐/nano‐structuresmentioning

confidence: 99%

Core‐Shell Micro‐ and Nano‐Structures for The Modification of Light‐Surface Interactions

Yeo,

Yu Tan

et al. 2023

Advanced Optical Materials

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Controlling how a material interacts with light is key to optimizing its optical properties to fit a desired function or application. The most straightforward approach is to chemically or physically modify the surface exposed to incident light. An effective method of surface modification is based on the addition of core‐shell structures at the surface. Of particular importance to many technological applications are core‐shell structures with dimensions comparable to the wavelengths of light extending from the UV up to the near‐IR region of the electromagnetic spectrum, which coincides with the major part of the solar spectrum. Surface modification approaches to tailor the optical properties of materials in this range of wavelengths are increasingly relevant in the context of materials and devices used in sustainable energy applications, such as solar cells and heat‐reflective paints. These materials are useful to mitigate the current energy and climate crises by allowing for enhanced energy harvesting and improved thermal management, respectively. Here, recent progress in the fabrication and application of core‐shell micro‐/nano‐structures for the modification of light interaction with surfaces is highlighted. Some limitations and future directions for the design of core‐shell materials are also discussed.

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Section: Anti‐reflective Core‐shell Micro‐/nano‐structuresmentioning

confidence: 99%

Core‐Shell Micro‐ and Nano‐Structures for The Modification of Light‐Surface Interactions

Yeo,

Yu Tan

et al. 2023

Advanced Optical Materials

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“…Some H2O molecules may be introduced to the ethanol-based solution together with nickel chloride, according to the oxygen reduction reaction (Equation 5). Then, an oxide layer is formed according to Equations (6) and (7). All of these hinder the uniform growth of a Ni layer on the particle's surface.…”

Section: The Effect Of Process Timementioning

confidence: 99%

“…The specific combination of chemical compositions of the core and shell practically defines the potential fabrication techniques and the resulting core-shell functionality [ 1 , 2 ]. The outer shell may be used to protect the core material in various ways: (1) Thermal barrier at elevated temperatures [ 3 ]; (2) physical barrier which provides a proper encapsulation of the core (in both solid and liquid states) [ 4 ]; (3) diffusion barrier which is designed to inhibit elemental segregation or interdiffusion between the core material and any material in its surrounding [ 5 ]; and (4) reflective/absorptive surface, e.g., to either reduce or increase laser absorbance in the metal powder during additive manufacturing (AM) [ 6 , 7 ]. In addition, the functionality of the outer shell may be beneficial when it reacts with its surrounding to: (1) Enhance metallurgical bonding with the matrix in a composite material [ 8 , 9 ]; (2) promote specific desired reaction [ 10 ]; and (3) enhance properties of the end material, e.g., corrosion resistance [ 11 ], increased re-melting temperature [ 12 ], density, or mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Processing and Thermal Properties of Functional Core/Multi-Shell ZnAl/Ni/NiP Microparticles

et al. 2021

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Electroless deposition on zinc and its alloys is challenging because of the negative standard potential of zinc, the formation of poor surface layers during oxidation in aqueous solutions, and extensive hydrogen evolution. Therefore, there are only few reports of electroless deposition on Zn and its alloys, neither of them on micro/nano powders. Here, we propose a two-step process that allows the formation of compact, uniform, and conformal Ni/NiP shell on Zn-based alloy microparticles without agglomeration. The process utilizes controlled galvanic displacement of Ni deposition in ethanol-based bath, followed by NiP autocatalytic deposition in an alkaline aqueous solution. The mechanism and effect of deposition conditions on the shell formation are discussed. Thermal stability and functional analysis of core-shell powder reveal a thermal storage capability of 98.5% with an encapsulation ratio of 66.5%. No significant morphological change of the core-shell powder and no apparent leakage of the ZnAl alloy through the Ni shell are evident following differential scanning calorimetry tests. Our two-step process paves the way to utilize electroless deposition for depositing metallic-based functional coatings on Zn-based bulk and powder materials.

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“…In recent decades, gallium arsenide (GaAs), a semiconductor of the III-V group, has attracted the attention of researchers due to its wide range of applications. GaAs finds utility in the manufacturing of integrated circuits [3], microelectronic devices [4], infrared radiation sensors [5], light emitting diodes [6], fiber optic sensors [7], and photovoltaic devices [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Unveiling the structural and optoelectronic properties of (P, Bi, Sb)-doped GaAs by first- principles calculations

López-Rendón,

Arellano-Ramirez,

Gil Rebaza

et al. 2024

Phys. Scr.

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In this work, we investigate the influence of M substitutions (M = P, Bi, and Sb) on the structural, electronic, and optical properties of gallium arsenide, GaMxAs1-x for x=0,0.25,0.50,0.75,1.0 using density functional theory (DFT). We have observed that the cubic symmetry of the semiconductors is conserved, and lattice constants show a linear behavior with dopant concentration, according to Vegard´s law. Specifically, the lattice constants increased for Bi and Sb dopants, whilst decreased for P dopants. Furthermore, the bulk modulus decreased with an increase in M-concentration for all M-doped systems. The energy analysis showed that the P-doped system was the most stable system. In terms of the electronic band structure, all M-doped compounds exhibited a direct electronic band gap. The P-doped system showed a wide band gap, while the Sb-doped system displayed a narrow band gap, both compared to pristine GaAs. The Bi-doped system showed metallic-like behavior. To gain insights into the linear optical properties of the GaMxAs1-x compounds, we calculated the real and imaginary parts of the dielectric function, as well as other optical parameters such as the absorption coefficient, refractive index, extinction coefficient, and reflectivity. The results showed that P doping leads to a blue-shift in the optical absorption coefficient, while Bi and Sb doping lead to a red-shift. These findings provide valuable theoretical insights for the potential application of GaMxAs1-x semiconductors in photovoltaic and optoelectronic devices

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Metallic Sb/GaAs core/shell nanowire as cold anti-reflective coating for optical fibres

Cited by 9 publications

References 19 publications

Core‐Shell Micro‐ and Nano‐Structures for The Modification of Light‐Surface Interactions

Core‐Shell Micro‐ and Nano‐Structures for The Modification of Light‐Surface Interactions

Electrochemical Processing and Thermal Properties of Functional Core/Multi-Shell ZnAl/Ni/NiP Microparticles

Unveiling the structural and optoelectronic properties of (P, Bi, Sb)-doped GaAs by first- principles calculations

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