Metallicity of In chains on Si(111)

Hill, Ian G.; McLean, A. B.

doi:10.1103/physrevb.56.15725

Cited by 57 publications

(65 citation statements)

References 16 publications

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“…It was suggested in the earlier electronic studies that the system was metallic with a high degree of asymmetry [10,11], and that furthermore there existed a half-filled band [11]. Our measurements are precise enough to determine the exact band filling, as well as the degree of coupling between the chains from the bandstructure.…”

Section: X1 Reconstruction: 1deg [4]supporting

confidence: 50%

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In/Si(111): Self-Assembled One and Two-Dimensional Electron Gases

et al. 2000

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We present angle-resolved photoemission measurements for ultrathin In films on Si(111). Depending on the coverage, this system self-organizes into a metallic monolayer with either 4x1 or !7x!3 symmetry relative to the substrate. Electronically, they behave like ideal one-and twodimensional electron gases (1DEG and 2DEG), respectively. The 4x1 system has atomic chains of In whose energy bands disperse only parallel to the chains, while for the !7x!3 system, the dominant reciprocal space features (in both diffraction and bandstructure) resemble a pseudosquare lattice with only weaker secondary features relating to the !7x!3 periodicity. In both materials the electrons show coupling to the structure. The 1DEG couples strongly to phonons of momentum 2k F , leading to an 8x"2" Peierls-like insulating ground state. The 2DEG appears to be partially stabilized by electron gap formation at the !7x!3 zone boundary.

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Section: X1 Reconstruction: 1deg [4]supporting

confidence: 50%

“…This system was characterized structurally [5][6][7][8][9] and electronically [10,11]. In these works it was found that the In atoms were organized into linear chains of atoms, and that the electronic properties appeared to be highly anisotropic, with metallic behavior indicated by band crossings of E F along the chains.…”

Section: X1 Reconstruction: 1deg [4]mentioning

confidence: 99%

In/Si(111): Self-Assembled One and Two-Dimensional Electron Gases

et al. 2000

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“…It has been found that at approximately 0.5 monolayer (ML), the 4 Â 1 phase of In on Si(111) is quasione-dimensional, with the In chains aligned along the step edges [9]. Angle-resolved photoemission (ARPES) and inverse photoemission (IPES) studies of the system [10,11] have identified a`metallic' state aligned with the step edges.…”

Section: Introductionmentioning

confidence: 98%

Optical Second Harmonic Generation Studies of Indium Deposited on Vicinal Si(111)

Chandola¹,

McGilp²

1999

phys. stat. sol. (a)

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Optical second harmonic generation (SHG), using 1064 nm excitation, has been used to probe the electronic structure of the single‐domain In‐induced 4 × 1 reconstruction of vicinal Si(111). Deposition of less than 1 monolayer of In onto a stepped Si(111) surface, held at 450 °C under ultra‐high vacuum conditions, produced a single domain 4 × 1 structure with the In chains aligned with the [‐110] step edges. On formation of the single domain Si(111)–4 × 1‐In structure, the s‐polarized SH response showed a large, anisotropic change. The nonlinear susceptibility along the chains, parallel to the step edges, increased by a factor of about 2.5 over that of Si(111)–7 × 7, while the change in the susceptibility in the surface plane perpendicular to the step edges was very small. Recent reflection anisotropy spectroscopy (RAS) studies of the same system found a dominant linear susceptibility in the surface plane perpendicular to the step edges, which was attributed to electron confinement effects. SHG and RAS are providing different, and complementary, information about this system. The SHG results are consistent with quasi‐one‐dimensional metallicity along the chains, evidence for which is seen in photoemission and inverse photoemission studies of the single domain Si(111)–4 × 1‐In structure.

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“…As one can imagine from this atomic arrangement, its surface electronic state is highly anisotropic. From photoemission spectroscopies [42,43], it is metallic along the In chains, while insulating in the perpendicular direction. In other words, the electrons are mobile along the In chains, while they can hop only with considerable energy to neighbouring chains.…”

Section: The Si(1 1 1) 7 â 7 Surface: a Poor Metal Or Mott Insulator?mentioning

confidence: 99%

Electronic transport at semiconductor surfaces––from point-contact transistor to micro-four-point probes

Hasegawa

Grey

2002

Surface Science

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The electrical properties of semiconductor surfaces have played a decisive role in one of the most important discoveries of the last century, transistors. In the 1940s, the concept of surface states--new electron energy levels characteristic of the surface atoms--was instrumental in the fabrication of the first point-contact transistors, and led to the successful fabrication of field-effect transistors. However, to this day, one property of semiconductor surface states remains poorly understood, both theoretically and experimentally. That is the conduction of electrons or holes directly through the surface states. Since these states are restricted to a region only a few atom layers thick at a crystal surface, any signal from them might be swamped by conduction through the underlying bulk semiconductor crystal, as well as greatly perturbed by steps and other defects at the surface. Yet recent results show that this type of conduction is measurable using new types of experimental probes, such as the multi-tip scanning tunnelling microscope and the micro-four-point probe. The resulting electronic transport properties are intriguing, and suggest that semiconductor surfaces should be considered in their own right as a new class of electronic nanomaterials because the surface states have their own characters different from the underlying bulk states. As microelectronic devices shrink even further, and surface-to-volume ratios increase, surfaces will play an increasingly important role. These new nanomaterials could be crucial in the design of electronic devices in the coming decades, and also could become a platform for studying the physics of a new family of low-dimensional electron systems on nanometre scales. Ó

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Metallicity of In chains on Si(111)

Cited by 57 publications

References 16 publications

In/Si(111): Self-Assembled One and Two-Dimensional Electron Gases

In/Si(111): Self-Assembled One and Two-Dimensional Electron Gases

Optical Second Harmonic Generation Studies of Indium Deposited on Vicinal Si(111)

Electronic transport at semiconductor surfaces––from point-contact transistor to micro-four-point probes

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