Metallurgy of Ohmic Contacts to InP

Ivey, Douglas G.; Jian, Ping

doi:10.1179/cmq.1995.34.2.85

Cited by 4 publications

(3 citation statements)

References 125 publications

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“…The high value of n has been ascribed to several effects: (i) interface states due to the oxide native layer located between metal and semiconductor [30,31], (ii) image force lowering of the Schottky barrier [32], and even (iii) generationrecombination currents within the space-charge region [33]. In our case, we demonstrate that the thin doping layer, n + , between the semiconductor and the metal, contributes to the formation of thermionic field emission (TFE) conduction that gives rise to a high value of ideality factor [34].…”

Section: Schottky and Pseudo-schottky Contactsmentioning

confidence: 87%

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Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Varenne

Brunet

Pauly

et al. 2008

Sensors and Actuators B: Chemical

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Section: Schottky and Pseudo-schottky Contactsmentioning

confidence: 87%

“…This current is intermediary between that of thermionic emission and a pure tunneling current [33,34]. The thermionic emission current permits a crossing over the barrier and dominates in semiconductors with weak doping, N D < 10 17 cm −3 .…”

Section: Variation Of N And˚b Of Pseudo-schottky Diodes With Temperaturementioning

confidence: 96%

Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Varenne

Brunet

Pauly

et al. 2008

Sensors and Actuators B: Chemical

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“…1 Palladium is one of the components in many Ohmic contacts to both p-and n-type III-V semiconductors. The requirements for Ohmic contacts and Schottky barriers get more stringent as the devices decrease in size.…”

Section: Introductionmentioning

confidence: 99%

Recoil spectrometry of thin film reactions in the Pd/InP system

Persson¹,

Bouanani²,

Hult³

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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High resolution electron energy loss spectroscopy study of vapor deposited pyromellitic dianhydride and oxydianiline films on Cu (110) Interfacial reactions between ͑100͒ InP and Pd were investigated as part of a systematic study aimed at investigating the stability of planar nonalloyed metallizations to InP. A 50-nm-thick Pd film was deposited on an InP substrate, and parts of it were subsequently thermally treated for 30 min at temperatures varying from 100 to 500°C in steps of 50°C. Separate characterizations of the Pd, In, and P depth distributions were obtained using mass and energy dispersive recoil spectrometry. The different phases were determined using x-ray diffraction, and scanning electron microscopy was used to study the surface topography. It is assumed that the interaction starts in the as-deposited sample, and definite formation of a ternary phase with the suggested composition Pd 5 In 2 P 2 starts at an annealing temperature of 100°C. At 250°C all Pd is chemically reacted. Preferential outdiffusion of P leads to a loss of P from the surface at 500°C, and the only phase observed in the x-ray diffraction spectrum from the surface is PdIn.

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In Operando X‐Ray Nanodiffraction Reveals Electrically Induced Bending and Lattice Contraction in a Single Nanowire Device

2015

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Hard X-ray diffraction (XRD) using a nanofocused beam is used to measure both lattice contraction and bending in a single nanowire device under electric bias. The shape of the nanowire is reconstructed in 3D with sub-nanometer precision. As the bias voltage is gradually increased, nonreversible structural changes in the contact regions are observed, correlated with degradation of the electrical conductance.

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Metallurgy of Ohmic Contacts to InP

Cited by 4 publications

References 125 publications

Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Recoil spectrometry of thin film reactions in the Pd/InP system

In Operando X‐Ray Nanodiffraction Reveals Electrically Induced Bending and Lattice Contraction in a Single Nanowire Device

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