Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

Saraf, Laxmikant V.; Engelhard, Mark H.; Wang, Chong M.; Lea, Alan S.; McCready, David E.; Shutthanandan, V.; Baer, Donald R.; Chambers, Scott A.

doi:10.1557/jmr.2007.0146

Cited by 14 publications

(7 citation statements)

References 20 publications

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“…Therefore, alternative precursors were considered for ALD of ZnS in this work. The precursor chosen for zinc was bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD) 2 ], because it is a nonpyrophoric solid precursor used for the chemical vapor deposition of zinc oxide 20 and has been used for ALD of ZnS in previous work. 21 While precursors typically used for the deposition of Cu 2 S do not necessarily have the same safety considerations as DEZn [e.g., the low-toxicity, nonflammable Cu 2 (DBA)], 22 the precursor chosen for copper in this study was Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)copper (Cu(TMHD) 2 ).…”

Section: Introductionmentioning

confidence: 99%

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Short

Jewell

Bielecki

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Multilayer film stacks of ZnS and Cu x S (x $ 2) were made via atomic layer deposition. The precursors were bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc, bis(2,2,6,6-tetramethyl-3,5heptanedionato)copper, and H 2 S generated in situ for sulfur. Samples were deposited at 200 C, in layers ranging from approximately 2 to 20 nm thick, based on binary growth rates. The properties of the film stacks were studied with atomic force microscopy, ultraviolet-visible spectroscopy, and extended x-ray absorption fine structure. The results demonstrate that the structure of films with the thinnest layers is dominated by Cu x S, whereas in the thicker films, the structure is determined by whichever material is first deposited. This can be attributed to the crystal structure mismatch of ZnS and Cu x S. V

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Section: Introductionmentioning

confidence: 99%

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Short

Jewell

Bielecki

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…8 The objective of this research was to examine the viability of Zn(TMHD) 2 as a precursor for atomic layer deposition, and to discover the ideal parameters for such a process.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of zinc sulfide with Zn(TMHD)2

Short¹,

Jewell²,

Doshay³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The atomic layer deposition (ALD) of ZnS films with Zn(TMHD)2 and in situ generated H2S as precursors was investigated, over a temperature range of 150–375 °C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet–visible–infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices.

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“…[27] Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(tmhd) 2 ] is a relatively unstudied precursor that has been recently applied to the deposition of ZnO. [28] Recently, we have obtained ZnO thin films deposited by MOCVD using the novel diamine (N,N,N 0 ,N 0 -tetramethylethylenediamine) adduct of zinc bis-2 thenoyltrifluoroacetonate [Zn(tta) 2 tmeda]. [29] Preliminary studies have shown that this precursor is suited to the deposition of ZnO thin films onto quartz substrates.…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnO Nanostructures Produced by MOCVD: A Study of the Effect of the Substrate

Scalisi

Toro

Malandrino

et al. 2008

Chemical Vapor Deposition

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A study of the influence of the substrate mismatch on the growth of ZnO nanostructures is reported. ZnO nanostructures are deposited, by a simple catalyst-free metal-organic (MO)CVD approach, onto various substrates, such as SrTiO 3 (100), Si(100), and Al 2 O 3 (0001), using a novel diamine adduct of zinc bis-2 thenoyl-trifluoroacetonate (Zn(tta) 2 Á tmeda, Htta ¼ CF 3 COCH 2-COC 4 H 3 S, tmeda ¼ N,N,N(,N(-tetramethylethylenediamine). Structural characterizations indicate that both morphology and crystalline structure of the obtained ZnO nanostructured systems strongly depend upon the crystalline mismatch with the substrate. Room-temperature cathodoluminescence (CL) spectroscopy is used to characterize the optical properties of the various nanostructures. The resulting cathodoluminescence spectra of all the samples show the presence of a strong and broad green band around 2.4 eV.

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Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

Cited by 14 publications

References 20 publications

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Atomic layer deposition of zinc sulfide with Zn(TMHD)2

Growth of ZnO Nanostructures Produced by MOCVD: A Study of the Effect of the Substrate

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