Metalorganic chemical vapor phase deposition of ZnO with different O-precursors

Oleynik, N.; Adam, M.; Krtschil, A.; Bläsing, J.; Dadgar, A.; Bertram, F.; Förster, D.; Diez, A.; Greiling, A.; Seip, Markus; Christen, J.; Krost, A.

doi:10.1016/s0022-0248(02)01879-1

Cited by 47 publications

(27 citation statements)

References 10 publications

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“…Thus, for the ZnO microrods sample, studied in this paper, the I λ (NBE/I λ (DLE) ≈ 0.01, i. e. DLE recombination significantly dominates over the NBE emission in the RT CL. Several different hypotheses have been proposed to explain the origin of the visible emission in ZnO, such as singly ionized oxygen vacancies [26][27][28][29], antisite oxygen [30], oxygen vacancies, zinc interstitials [31] and impurities [32,33]. However, the origin of the visible emission is still rather controversial issue in ZnO.…”

Section: Resultsmentioning

confidence: 99%

Luminescence anisotropy of ZnO microrods

Khranovskyy¹,

Лазоренко²,

Lashkarev³

et al. 2012

Journal of Luminescence

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Section: Resultsmentioning

confidence: 99%

Luminescence anisotropy of ZnO microrods

Khranovskyy¹,

Лазоренко²,

Lashkarev³

et al. 2012

Journal of Luminescence

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“…There are several processing techniques that can provide good candidates for fabricating ZnO films, such as chemical vapour deposition [7], pulsed laser deposition [8], sputtering [9], and sol-gel process [10]. The desired characteristics need to be balanced with the processing costs for the practical industrial applications.…”

Section: Introductionmentioning

confidence: 99%

Aluminum-Doped Zinc Oxide Thin Films Prepared by Sol-Gel and RF Magnetron Sputtering

Chen

2011

Acta Phys. Pol. A

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Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. In this paper, aluminum-doped zinc oxide thin films have been prepared on glass substrates using a sol-gel route and the radio-frequency magnetron sputtering process. The stoichiometry could be easily adjusted by controlling the nanosized precursor concentration and the thickness by dip-coating cycles. On the other hand, the mixed N 2 O/Ar plasma gas provided adequate N doping for the RF sputtering process. The results showed the low electrical resistivity of 21.5 Ω cm with the carrier concentration of −3.21 × 10 18 cm −3 for the n-type aluminium-doped zinc oxide film. They were 34.2 Ω cm and +9.68 × 10 16 cm −3 for the p-type aluminium-doped zinc oxide film. The optical transmittance has been as high as 85-90% in the 400-900 nm wavelength range. The aluminium-doped zinc oxide (2 at.% Al) films exhibited the hexagonal wurzite structure with (002) preferred crystal orientation. The electrical characteristics were depicted by the gradual increase in N and NO that occupy the oxygen vacancies.

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“…10,11 Reviews of the properties and the potential optoelectronic and microelectronic applications of this material have been published. 12,13 Thin films of ZnO have been grown by molecular beam epitaxy, 14-21 metalorganic chemical vapor deposition (MOVPE), [22][23][24][25][26][27][28][29][30] RF magnetron sputtering, 31,32 pulsed laser deposition, 33,34,35 and spray pyrolysis 36,37 on a range of substrates. The results of transmission electron microscopy (TEM) investigations of ZnO(0001) grown epitaxially on GaN(0001) epilayers previously deposited on [0001]-oriented sapphire have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of ZnO thin films on GaN epilayers

Smith

Mclean

Smith

et al. 2004

Journal of Elec Materi

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Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O 2 were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films.

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Metalorganic chemical vapor phase deposition of ZnO with different O-precursors

Cited by 47 publications

References 10 publications

Luminescence anisotropy of ZnO microrods

Luminescence anisotropy of ZnO microrods

Aluminum-Doped Zinc Oxide Thin Films Prepared by Sol-Gel and RF Magnetron Sputtering

Growth and characterization of ZnO thin films on GaN epilayers

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