Metalorganic vapor phase epitaxial growth and characterization of ZnSe-GaAs multilayered structures

Funato, Mitsuru; Ito, Masahiro; Murawala, Prakash A.; Tsuji, Osamu; Fujita, Shizυo; Fujita, Shigeo

doi:10.1016/0022-0248(92)90810-6

Cited by 10 publications

(5 citation statements)

References 4 publications

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“…A series of samples were grown at the same gas flow rates of VI/II = 8 and V/Ill = 5 at the different growth temperatures of Tg =450-550°C. The surface morphology observed by a Nomarski microscope revealed that the double layers grown at high temperature (550°C) have rough surfaces, while those grown at low temperatures (<~ 550°C) have mirror-like surfaces, consistent with the previous report on thicker double layers (Funato et al 1992). Figure 2 shows cross-sectional [110] TEM bright-field images of the samples.…”

Section: Growth Of Gaas On Znsesupporting

confidence: 83%

“…Khurgin (1988) showed that the nonlinear and electrooptic coefficients of ZnSe-GaAs heterostructures are substantially larger than those of conventional materials, such as A1GaAs-GaAs heterostructures. However, there are few reports on the fabrication of ZnSe-GaAs QWs (Kobayashi and Horikoshi 1990;Funato et al 1992Funato et al , 1993Zhang and Kobayashi 1992), because growth of GaAs on ZnSe is considerably more difficult than the inverse, much-studied growth of ZnSe on GaAs. This is due to the widely different 343 optimum growth temperatures for the two materials: high-quality ZnSe on GaAs is grown at temperatures below 500°C, whereas GaAs with superior properties is grown at temperatures above 600°C by MOVPE.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, MOVPE has an advantage over MBE that GaAs can be grown on ZnSe at constant growth temperature (Funato et al 1992(Funato et al , 1993). In the work described in this paper, the effect of growth conditions, especially'growth temperature and V/III ratio, on the growth behaviour in GaAs MOVPE onto ZnSe (001) was studied by means of transmission electron microscopy (TEM).…”

Section: Introductionmentioning

confidence: 99%

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MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures

Funato

Fujita

1995

Bull. Mater. Sci.

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ZnSe-GaAs heterovalent heterostructures were fabricated by metalorganic vapour phase epitaxy and characterized structurally and electrically. A study on growth behaviour of GaAs on ZnSe revealed that either the 2-dimensional or the 3-dimensional growth mode may occur depending on the growth conditions. This growth behaviour is applied to the construction of low-dimensional structures. Successful fabrication of quantum well structures and GaAs islands buried into ZnSe is demonstrated by means of X-ray diffraction and transmission electron microscopy. The electrical properties of the heterostructures are also described.

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Section: Growth Of Gaas On Znsesupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures

Funato

Fujita

1995

Bull. Mater. Sci.

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“…On the other hand, the possibility of growing ZnSe/GaAs superlattices has been demonstrated by MOVPE. 5 In this letter, periodic insertion of Zn-doped GaAs clusters into ZnSe films is reported for studying the possibility of realizing p-type conductivity in ZnSe films. It will be shown that control of ZnSe surface reconstructions before depositing GaAs is crucial to control the electrical conductivities of the grown films.…”

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confidence: 99%

Hole activation from GaAs:Zn nanoclusters for p-type conduction in ZnSe

Suemune

Hirose

Ueta

2000

Applied Physics Letters

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Growth of p-type ZnSe has been limited to nitrogen doping in molecular-beam epitaxy. As an alternative to nitrogen doping, GaAs cluster doping is proposed in this letter, where GaAs has small lattice mismatch of 0.28% to ZnSe and can potentially be heavily doped in p type. Hole activation to the valence band of the ZnSe layers could be observed by the reduction of the thickness of the GaAs layers in order to form nanoclusters. This was achieved with alternate supplies of triethylgallium and trisdimethylaminoarsenic, and the net acceptor concentration of ∼1017 cm−3 was observed.

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“…Similar structures composed of ZnSe on GaAs have also been investigated for light-generating [3] and photovoltaic applications [4]. Metallorganic vapor phase epitaxy (MOVPE) deposition of ZnSe on (100) GaAs was shown by Funato and coworkers [5] to be a practical means of growing epitaxial ZnSe layers at temperatures below 500 ºC.…”

Section: Introductionmentioning

confidence: 99%

X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

et al. 2009

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ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pindiode LED applications. ZnSe has a large band gap, 2.76 eV, as well as a near lattice match to GaAs, 5.6688 Å vs. 5.6538 Å, respectively. In this study a metallorganic vapor phase epitaxy (MOVPE) deposition technique is used to produce doped and undoped thin films of ZnSe on (100) GaAs. Understanding the effect of deposition parameters on the crystallographic quality of the ZnSe films is important for optimizing the performance of these devices. X-ray diffraction is well suited for analyzing epitaxial thin films deposited on single-crystal substrates. In this study, a conventional Bragg-Brentano diffractometer (BBD) has been used to screen samples for phase identification, crystallite size, presence of polycrystalline ZnSe, and initial rocking curve (RC) analysis. A limitation of the conventional diffractometer is that the smallest RC full width at half maximum (FWHM) that can be achieved is 500-600 arc seconds. As deposition parameters are optimized and the RC limit of the conventional diffractometer is reached, analysis is moved to a 4-bounce high-resolution diffractometer (HRD). Although more time for analysis is required, using the HRD has a RC resolution advantage, where RCs of <20 arc seconds are obtained for neat GaAs wafers. Combining the BBD and HRD instruments for analysis of ZnSe films grown on GaAs substrates allows for an efficient means of high sample throughput combined with an accurate measurement of film alignment.

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Metalorganic vapor phase epitaxial growth and characterization of ZnSe-GaAs multilayered structures

Cited by 10 publications

References 4 publications

MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures

MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures

Hole activation from GaAs:Zn nanoclusters for p-type conduction in ZnSe

X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

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