Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Post-deposition annealing of magnetron sputtered InAlN film at different temperatures

“…Various techniques such as metal organic vapor phase epitaxy (MOVPE) [10][11][12], molecular beam epitaxy (MBE) [13][14], magnetron sputtering [15][16][17][18][19], pulsed laser deposition [20] and reactive evaporation [21] have been used to grow InAlN thin films. Growth of these films using MOVPE and MBE suffers from the difficulties associated with a large difference in the growth temperatures and thermal stabilities of InN and AlN that often result in the phase separation [22].…”

Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films

“…5 InN has also been used for alloying with AlN to achieve InAlN alloy systems since InAlN with about 17% of In-content is lattice-matched with the GaN, which leads to the elimination of lattice-mismatch strain and of strain-driven piezoelectric polarization field in InAlN/GaN configuration based heterostructures. 6 The optical properties of InN have therefore to be investigated in details which is inevitable to make InN useful for device applications. InN is known to have different residual electron densities, which have significant influence on the photoluminescence (PL) characteristics of InN.…”

Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy

“…The observed full width at half maximum (FWHM) values of 148 arc sec in the (0002) plane and 136 arc sec in the (10 15) plane are among the best reported in the literature for InAlN. 7,18 However, electron microscopy reveals that these samples possess the nanocolumnar microstructure typical of MBE-grown InAlN. The insets in Fig.…”

“…The narrowest x-ray diffraction line widths are found near the x % 0.166 lattice matching condition and are superior to values reported in the literature. 7,18 In comparison with MOCVD-grown InAlN films, it is found that the Stokes shift of the emission from the absorption edge is significantly greater, possibly due to the nanocolumnar phase separation observed in PAMBE-grown InAlN. The data also provide evidence of carrier transfer from the InAlN film to the GaN template.…”