Metalorganic vapor phase epitaxy of large size CdTe grains on mica through chemical and van der Waals interactions

Mohanty, Dibyajyoti; Lu, Zonghuan; Sun, Xin; Xiang, Yu; Wang, Yiping; Ghoshal, Debjit; Shi, Jian; Gao, Lei; Shi, Su‐Fei; Washington, Morris; Wang, G.-C.; Lu, Toh‐Ming; Bhat, Ishwara B.

doi:10.1103/physrevmaterials.2.113402

Cited by 15 publications

(26 citation statements)

References 45 publications

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“…Growth of films on pure vdW surfaces, such as CdTe on graphene, [ 20 ] generally lead to large azimuthal orientational dispersions. For systems where weak interface chemical interaction and vdW forces contribute to the interfacial energy, such as CdTe on Mica, [ 21 ] decreased in‐plane orientation dispersion has been observed, which leads to higher epitaxial quality. Similarly, it is postulated that weak chemical interaction drives the formation of a Te surface decoration of sapphire during deposition, constraining the in‐plane orientation of the CdTe epilayer to a single domain.…”

Section: Figurementioning

confidence: 99%

Spontaneous Relaxation of Heteroepitaxial Thin Films by van der Waals‐Like Bonding on Te‐Terminated Sapphire Substrates

Jovanovic

El‐Sherif

Bassim

et al. 2020

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Heteroepitaxy of thin film materials is a fundamental industrial process for the fabrication of high-quality electronic and electrooptic devices. Conventionally, strong bonding of adatoms on a substrate leads to a coherent thin film below a critical thickness, where the thin film grows strained from its relaxed lattice spacing. Above this critical thickness strain is relieved by defect generation in the thin film. Commercial development of heteroepitaxial technologies is limited by both the availability and cost of lattice-matched substrates. This lattice matching requirement is diminished for van der Waals (vdW) heteroepitaxial systems due to weak interlayer

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Section: Figurementioning

confidence: 99%

Spontaneous Relaxation of Heteroepitaxial Thin Films by van der Waals‐Like Bonding on Te‐Terminated Sapphire Substrates

Jovanovic

El‐Sherif

Bassim

et al. 2020

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“…Due to the lack of "dangling bond" at the vdW surface, the requirement of lattice matching in a conventional chemical (bonding) epitaxy can be relaxed. 10 Furthermore, the vdW interface enables the transferring of an epitaxial CdTe film from a vdW substrate to another arbitrary substrate, thus suggesting great potential applications in flexible solar cells and other optoelectronic devices. Muscovite mica (K 2 O•Al 2 O 3 • SiO 2 ), a layered material, has been traditionally considered to be a vdW type of material with a weak surface interaction.…”

Section: Introductionmentioning

confidence: 99%

“…10 However, recent experiments and density functional theory calculations indicated that when a 3D material is deposited on the mica surface, there may also exist a chemical interaction component that involves an exchange of charges in addition to the traditional vdW forces. 10,11 The interaction between the epitaxial film and the mica substrate is therefore somewhat stronger than a traditional vdW surface but weaker than a purely chemical nature. Nevertheless, it is still sufficiently weak so that the epitaxial film can be detached from the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

“…The diverse growth techniques for the epitaxial CdTe films include molecular beam epitaxy (MBE), 12 metalorganic chemical vapor deposition (MOCVD), 10,15 pulse laser deposition (PLD), 16 hot wall epitaxy, 17 close space sublimation (CSS), 18 and vapor transport deposition (VTD). 19,20 MBE and MOCVD have been attempted for vdW epitaxy of CdTe films on mica.…”

Section: Introductionmentioning

confidence: 99%

“…19,20 MBE and MOCVD have been attempted for vdW epitaxy of CdTe films on mica. 10,12 However, their growth rates are rather slow, about 4 nm/min for MBE and 1.7 nm/min for MOCVD, and thus increase the cost of CdTe films. Among these techniques, VTD is a high-rate, low-cost scalable manufacturing technique.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial CdTe Thin Films on Mica by Vapor Transport Deposition for Flexible Solar Cells

Wen

Sun

et al. 2020

ACS Appl. Energy Mater.

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Most high-quality CdTe thin films are epitaxially grown on single-crystalline substrates through chemical bondings by either molecular beam epitaxy or metalorganic chemical vapor deposition. The epitaxial CdTe films are rarely applied in electronic or optoelectronic devices because of the rigid single-crystalline substrate. We present high-quality CdTe films epitaxially grown on mica by vapor transport deposition process through weak interface interactions. The full width at half-maximum (fwhm) of the X-ray diffraction rocking curve of CdTe ( 111) and the fwhm of azimuthal in-plane angular dispersion of CdTe (111) were 0.23°and 0.36°, respectively. The weak interaction at the interface enables a transfer of the epitaxial film from mica onto other flexible substrates for applications. The epitaxial CdTe film was separated from the mica substrate by the surface tension of water during immersion and then transferred onto a flexible SU-8 photoresist substrate for the fabrication of CdTe solar cells. We successfully fabricated the flexible all-epitaxial, epi-CdS/epi-CdTe solar cells with a power conversion efficiency of 9.59%, which showed low interface defects and high diode quality compared to the poly-CdS/epi-CdTe solar cells.

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Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging

et al. 2021

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Metalorganic vapor phase epitaxy of large size CdTe grains on mica through chemical and van der Waals interactions

Cited by 15 publications

References 45 publications

Spontaneous Relaxation of Heteroepitaxial Thin Films by van der Waals‐Like Bonding on Te‐Terminated Sapphire Substrates

Spontaneous Relaxation of Heteroepitaxial Thin Films by van der Waals‐Like Bonding on Te‐Terminated Sapphire Substrates

Epitaxial CdTe Thin Films on Mica by Vapor Transport Deposition for Flexible Solar Cells

Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging

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