Metalorganic Vapor Phase Epitaxy (MOVPE) 2019
DOI: 10.1002/9781119313021.ch5
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Metamorphic Growth and Multijunction III‐V Solar Cells

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Cited by 3 publications
(3 citation statements)
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“…[346,347] With this, high-quality thin films of only a few μm are sufficient for almost complete sunlight absorption fabricated from crystalline materials with high perfection, and lattice constants, adjusted to the lattice constant of the substrate material. Alternatively, lattice constants can be changed with metamorphic, so-called graded material growth [348,349] by a stepwise change of the atomic distances in the conventional unit cells in order to avoid severe crystalline defects detrimental with regard to nonradiative impurity recombination. [45] To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity materials are typically inserted between each adjacent semiconductor cell.…”
Section: Iii-v Compoundsmentioning
confidence: 99%
“…[346,347] With this, high-quality thin films of only a few μm are sufficient for almost complete sunlight absorption fabricated from crystalline materials with high perfection, and lattice constants, adjusted to the lattice constant of the substrate material. Alternatively, lattice constants can be changed with metamorphic, so-called graded material growth [348,349] by a stepwise change of the atomic distances in the conventional unit cells in order to avoid severe crystalline defects detrimental with regard to nonradiative impurity recombination. [45] To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity materials are typically inserted between each adjacent semiconductor cell.…”
Section: Iii-v Compoundsmentioning
confidence: 99%
“…Main fabrication step of III-V solar cells, exemplified for the top GaInP cell and contact layers (Karam et al, 2019).…”
Section: Figurementioning
confidence: 99%
“…After injecting precursors, MOVPE is used for the IMM growth of GaInP and GaAs sub cell with the BSF, window, emitter and tunneling layers as shown in Figures 1, 4. Currently, IMM prevails in growing top 2 cells, preventing threading dislocations with bandgap tuning and nitrogen addition enabling the structural bandgap sequences to be better matched (Karam et al, 2019). The growth temperature ranges between 600-700 °C.…”
Section: Frontiers In Energy Researchmentioning
confidence: 99%