Metamorphic growth of InAlAs/InGaAs MQW and InAs HEMT structures on GaAs

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

“…Recently, HEMT structures with InAsinserted channel have been demonstrated on GaAs substrates [6][7][8][9][10]. To explore various physical properties of InAs HEMTs structures, numerous characterization methods have been applied, including X-ray techniques, transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) [11][12][13][14].…”

Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode

“…Using this sample, the effect of arsenic dimers on the structural properties and surface morphology of the experimental heterostructures was studied. According to some published data, the use of arsenic dimers As 2 instead of tetramers As 4 improves the crystalline quality, which is expressed in a decrease in the surface roughness and the appearance of narrower and more intense peaks in the X-ray diffraction pattern [15]. When growing all other samples, arsenic tetramers As 4 were used.…”

Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures

“…Among the many parameters for the growth of high quality InAs two-dimensional electron gas (2DEG) on GaAs [10][11][12], we focus here on the Si-delta-doping density effect. Micro-Raman spectroscopy is a powerful technique for the investigation of modulation doped quantum wells.…”