Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review

Seravalli, L.

doi:10.1016/j.mee.2023.111996

Cited by 8 publications

References 109 publications

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Electrode‐Dependent and Tunable Sub‐to‐Super‐Linear Responsivity in Mott Material‐Enabled Near‐Infrared Photodetectors for Advanced Near‐Sensor Image Processing

Li,

Xie,

Chen

et al. 2024

Advanced Materials

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Brain‐like intelligence is ushering humanity into an era of the Internet of Perceptions (IoP), where the vast amounts of data generated by numerous sensing nodes pose significant challenges to transmission bandwidth and computing hardware. A recently proposed near‐sensor computing architecture offers an effective solution to reduce data processing delays and energy consumption. However, a pressing need remains for innovative hardware with multifunctional near‐sensor image processing capabilities. In this work, Mott material (vanadium dioxide)‐based photothermoelectric near‐infrared photodetectors are developed that exhibit electrode‐dependent and tunable super‐linear photoresponse (exponent α > 33) with ultralow modulation bias. These devices demonstrate an opto‐thermo‐electro‐coupled phase transition, resulting in a large photocurrent on/off ratio (>105), high responsivity (≈500 A W−1), and well detectivity (≈3.9 × 1012 Jones), all while maintaining rapid response speeds (τr = 2 µs and τd = 5 µs) under the bias of 1 V. This electrode‐dependent super‐linear response is found to arise from the electron doping effect determined by the polarity of the Seebeck coefficient. Furthermore, the work showcases intensity‐selective near‐sensor processing and night vision pattern reorganization, even with noisy inputs. This work paves the way for developing near‐sensor devices with potential applications in medical image preprocessing, flexible electronics, and intelligent edge sensing.

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Electrode‐Dependent and Tunable Sub‐to‐Super‐Linear Responsivity in Mott Material‐Enabled Near‐Infrared Photodetectors for Advanced Near‐Sensor Image Processing

Li,

Xie,

Chen

et al. 2024

Advanced Materials

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The band structure of a chain of periodically ordered different quantum dots

Leshko,

Bandura,

Bilynskyi

et al. 2024

Physica B: Condensed Matter

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Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates

Rudno-Rudziński,

Gawełczyk,

Podemski

et al. 2024

ACS Appl. Mater. Interfaces

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Integrating light emitters based on III−V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5°off-cut Si substrate and emitting light at 1.5 μm, compatible with established telecom platform. Using different dislocation defect filtering layers, exploiting strained superlattices, and supplementary QD layers, we mitigate the effects of lattice constant and thermal expansion mismatches between III−V materials and Si during growth. Complementary optical spectroscopy techniques, i.e. photoreflectance and temperature-, time-and polarization-resolved photoluminescence, allow us to determine the optical quality and application potential of the obtained structures by comparing them to a reference sample−state-of-the-art QDs grown on InP. Experimental findings are supported by calculations of excitonic states and optical transitions by combining multiband k•p and configurationinteraction methods. We show that our design of structures prevents the generation of a considerable density of defects, as intended. The emission of Si-based structures appears to be much broader than for the reference dots, due to the creation of different QD populations which might be a disadvantage in particular laser applications, however, could be favorable for others, e.g., in broadly tunable devices, sensors, or optical amplifiers. Eventually, we identify the overall most promising combination of defect filtering layers and discuss its advantages and limitations and prospects for further improvements.

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Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review

Cited by 8 publications

References 109 publications

Electrode‐Dependent and Tunable Sub‐to‐Super‐Linear Responsivity in Mott Material‐Enabled Near‐Infrared Photodetectors for Advanced Near‐Sensor Image Processing

Electrode‐Dependent and Tunable Sub‐to‐Super‐Linear Responsivity in Mott Material‐Enabled Near‐Infrared Photodetectors for Advanced Near‐Sensor Image Processing

The band structure of a chain of periodically ordered different quantum dots

Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates

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