Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region

Wang, Ding; Donetsky, D.; Kipshidze, G.; Lin, Youxi; Shterengas, L.; Belenky, Gregory; Sarney, Wendy L.; Svensson, Stefan P.

doi:10.1063/1.4817823

Cited by 32 publications

(21 citation statements)

References 11 publications

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“…There has been rapid progress in the development of nBn devices which has resulted in the demonstration of single pixel detectors and imagers based on InAs-AlAsSb, InAsSb-AlAsSb, and InAs/ GaSb-AlAsSb absorber-barrier material pairs, grown on InAs, GaSb, and GaAs substrates and covering both the midwavelength and long-wavelength infrared (MWIR and LWIR) spectral ranges. [6][7][8][9][10][11] However, the studies of these devices were hitherto limited to cryogenic temperatures.…”

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Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

Soibel

Hill

Keo

et al. 2014

Applied Physics Letters

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In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325 K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150 K–325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(λ) = 1 × 109 (cm Hz0.5/W) at T = 300 K and D*(λ) = 5 × 109 (cm Hz0.5/W) at T = 250 K, which is easily achievable with a one stage TE cooler.

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confidence: 99%

Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

Soibel

Hill

Keo

et al. 2014

Applied Physics Letters

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“…In addition, bulk materials have higher absorption coefficients, resulting in higher quantum efficiency. Therefore, InAsSb-based materials are also gaining attention for the development of long-wave infrared (LWIR) photodetectors [25][26][27][28][29] .…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Characteristics of Metamorphic Bulk InAsSb

Lin

Wang

Donetsky

et al. 2014

Int. J. Hi. Spe. Ele. Syst.

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Int. J. Hi. Spe. Ele. Syst. 2014.23. Downloaded from www.worldscientific.com by FLINDERS UNIVERSITY LIBRARY on 02/09/15. For personal use only. Y. Lin et al. 1450021-2Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% and layer thicknesses up to 3 μm were grown by molecular beam epitaxy. The photoluminescence (PL) peak energy as low as 0.10 eV was demonstrated at T = 77 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures from T = 80 to 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

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“…Detector devices can still be made using various barrier designs. [8][9][10][11][12]. In these types of structures a large bandgap layer is used, and surface leakage is blocked; either due to its inherent absence of surface electron accumulation and/or oxidation due to the high Al-content typically used in such designs.…”

Section: Introductionmentioning

confidence: 99%