Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region
Suho Park,
Phuc Dinh Nguyen,
Yeongho Kim
et al.
Abstract:Solid‐state infrared sources designed to emit wavelengths above 2 µm often face challenges in achieving high emission efficiency, minimizing power consumption, and reducing fabrication costs. In response, a 2.4 µm wavelength light emitting diode (LED) is developed using metamorphic In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) heterostructures. The substantial conduction (94 meV) and valence band offsets (300 meV) within this type‐I MQW LED architecture result in strong carrier confinement, imp… Show more
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