Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

InGaAs strain relaxation is studied by an in situ multibeam optical stress sensor (MOSS). Strain relaxation during growth of InGaAs on GaAs occurs at different thicknesses and rates along the directions perpendicular to its misfit dislocations, [110] and [11¯0]. We show the asymmetry of relaxation between these directions in real time by aligning the MOSS laser array along [110] and [11¯0]. This asymmetric relaxation data from the MOSS correlates with both x-ray diffraction relaxation analysis and an estimation of the misfit dislocation density from transmission electron microscopy images. Lowering the V/III ratio or raising the growth temperature lowers the thickness of the onset of dislocation formation, changes the relaxation rate, lowers the final relaxation during 2 μm of growth, and shifts the initial direction of relaxation from [110] to [11¯0]. We identify two phases of relaxation that occur at different growth thicknesses. Lowering the V/III ratio changes the relative contribution of each of these phases to the total relaxation of the epilayer.

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Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy

France

Ptak

Jiang

et al. 2010

Journal of Applied Physics

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Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs

Zhu

Han

Yang

et al. 2010

Chinese Phys. Lett.

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Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 𝜇m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10 −6 A/cm 2 at 0 V bias and 2.24 × 10 −4 A/cm 2 at a reverse bias of 5 V. At a wavelength of 1.55 𝜇m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at −4 V bias. The measured −3 dB bandwidth of a 32 𝜇m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

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Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition

Wang¹,

Deng²,

Zhi-Gang³

et al. 2013

Chinese Phys. Lett.

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To explain different doping effects in a buffer layer, thermally annealed interface, and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition (MOCVD), the behaviors of unintentional doping in GaAs/Si films are investigated in detail. A third doping mechanism of arsine impurity incorporation during the growth process of GaAs/Si films, apart from conventional mechanisms of gas phase reaction and diffusion from the silicon substrate, is proposed. The experimental results reveal that the doping behavior in the buffer layer studied is determined by the three types of doping mechanisms together. However in the thermally annealed interface and upper epilayers, the third doping mechanism is dominant. According to the third mechanism, the background carrier concentration in GaAs/Si films grown by MOCVD could be properly controlled through the arsine flow rate.

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Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

Cited by 6 publications

References 14 publications

Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy

Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy

Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs

Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition

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