Metastability of the Isolated Arsenic-Antisite Defect in GaAs

Electronic structures and mechanical properties of boron and boron-rich crystals (Part I)

“…While the bond stretching of the Si-H bond has the largest force constant in this system, a molecular dynamics simulation shows that the H atom easily migrates among interstitial sites even at room temperature. In the defects in semiconductors, it is known a rather surprising feature that an impurity atom can be displaced in the direction of the strongest bond in some circumstances [167].…”

NewAsGarelated center in GaAs

“…Thus it is surprising that there is still controversy over the microscopic structure of EL2, i.e. , whether it is an isolated Aso, , center [2,3] or a complex with another defect, say, the arsenic interstitial As; [4]. Over the years there has been evidence usually from a single experiment of one type or another that there is more than one "EL2-like" defect.…”

Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs

“…That is the case of the well known DX centers in AlGaAs 1-3 and the EL2 defects in GaAs 4 . Both have c harge states which are related to a large lattice relaxation 5,6 . The transfer of the DX centers by light a t l o w temperature is accompanied by a persistent photocurrent PPC 7,8 , whereas that of EL2 is related with a persistent quenching of the photocurrent PPCQ 9 .…”