Metastable boron active concentrations in Si using flash assisted solid phase epitaxy

Jain, Suresh; Griffin, P.B.; Plummer, J.D.; McCoy, S.; Gelpey, J.; Selinger, T.; Downey, Daniel F.

doi:10.1063/1.1814792

Cited by 35 publications

(20 citation statements)

References 7 publications

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“…Experiments [5][6][7][8][9][10] and theoretical calculations [11,12] seem to evidence B clustering within the regrown layer for high B concentrations. Sheet resistance measurements [5,[7][8][9] and the hump observed in secondary ion mass spectrometry (SIMS) profiles (associated to B diffusion in amorphous Si) [5,7,8,10] are consistent with active B concentrations up to a few times 10 20 cm −3 for regrowth temperatures around 600 • C, and higher levels can be reached if the regrowth takes place at higher temperatures [27]. The study of the formation of B clusters in amorphous Si requires a complex modeling.…”

Section: Simulation Modelmentioning

confidence: 78%

Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

Aboy

Pelaz

Barbolla

et al. 2005

Materials Science and Engineering: B

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Section: Simulation Modelmentioning

confidence: 78%

Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

Aboy

Pelaz

Barbolla

et al. 2005

Materials Science and Engineering: B

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“…At present, commercial simulators have proven inadequate for even qualitative predictions of the boron pileup phenomena at the surface/interface. 5 Lately interest in silicon-on-insulator ͑SOI͒ technology has strongly increased due to the expected superior performance and fabrication advantages of this material with respect to those of bulk silicon. 22 As far as the diffusion phenomenon is concerned, the presence in the SOI samples of a buried Si/ SiO 2 interface provides another efficient sink for the interstitials besides the silicon surface.…”

Section: 2mentioning

confidence: 99%

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Ferri

Solmi

Giubertoni

et al. 2007

Journal of Applied Physics

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Redistribution during annealing of low-energy boron ͑B͒ implants in silicon on insulator ͑SOI͒ structures and in bulk Si has been investigated by comparing secondary ion mass spectrometry ͑SIMS͒ and simulated profiles. All the samples have been preamorphized with Ge at different implantation energies in order to investigate the effects of the position of the damage on B diffusion. Different B doses in the range between 2 ϫ 10 13 and 2 ϫ 10 15 cm −2 and annealing temperatures between 700 and 1100°C have been investigated. All SIMS profiles show a B pileup in the first few nanometers of the Si matrix in proximity of the Si surface. The results of our simulations, performed on samples implanted at different doses ͑below and above the solid solubility͒, indicate that the B redistribution upon annealing can be explained with a simple model which considers the presence of traps in the surface region, without considering any asymmetric behavior of the dopant diffusion. The sink region is a few monolayers ͑1-2 nm͒ for doses of 2 ϫ 10 13 and 2 ϫ 10 14 cm −2 , and it extends to about 7 nm for the highest dose of 2 ϫ 10 15 cm −3 , in the region of very high B concentration where precipitates and clusters shrink the incoming B atoms. For the two lowest B doses, the amount of B trapped at the surface is maximum at temperatures around 800°C, when more than 80% of the implanted dopant is made immobile and electrically inactive. In our experimental conditions, i.e., preamorphization performed with constant dose and different implantation energies, the amount of trapped B increases with reducing the depth of the amorphous layer and it is higher in the bulk Si than in SOI.

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“…Experiments [6,7] and theoretical calculations [8] seem to evidence B clustering within the regrown layer for high B concentrations. Sheet resistance measurements [6,7] and the hump observed in Secondary Ion Mass Spectrometry (SIMS) profiles (associated to B diffusion in amorphous Si) [6,7] are consistent with active B concentrations up to a few times 10 20 cm À3 for regrowth temperatures around 6001C, and higher levels can be reached if the regrowth takes place at higher temperatures [46]. The study of the formation of BICs in amorphous Si requires a complex modeling.…”

Section: Resultsmentioning

confidence: 68%

Atomistic analysis of B clustering and mobility degradation in highly B‐doped junctions

Aboy

Pelaz

López

et al. 2009

Int J Numerical Modelling

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SUMMARYIn this paper we discuss from an atomistic point of view some of the issues involved in the modeling of electrical characteristics evolution in silicon devices as a result of ion implantation and annealing processes in silicon. In particular, evolution of electrically active dose, sheet resistance and hole mobility has been investigated for high B concentration profiles in pre-amorphized Si. For this purpose, Hall measurements combined with atomistic kinetic Monte Carlo atomistic simulations have been performed. An apparent anomalous behavior has been observed for the evolution of the active dose and the sheet resistance, in contrast to opposite trend evolutions reported previously. Our results indicate that this anomalous behavior is due to large variations in hole mobility with active dopant concentration, much larger than that associated to the classical dependence of hole mobility with carrier concentration. Simulations suggest that hole mobility is significantly degraded by the presence of a large concentration of boron-interstitial clusters, indicating the existence of an additional scattering mechanism.

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Metastable boron active concentrations in Si using flash assisted solid phase epitaxy

Cited by 35 publications

References 7 publications

Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Atomistic analysis of B clustering and mobility degradation in highly B‐doped junctions

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