Metastable donor states in Te- doped Gal−xAlxSb compounds

Konczewicz, Leszek; Litwin‐Staszewska, E.; Porowski, S.; Iller, A.; Aulombard, Roger; Robert, Jean-Louis; Joullié, A.

doi:10.1016/0378-4363(83)90450-3

Cited by 6 publications

(1 citation statement)

References 4 publications

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“…To resolve it, we consider a more detailed model of the SA emission. At low pressure, the pertinent recombination in, e.g., ZnSe : C1, is Close + (V& - (5) A similar reaction applies for ZnSe : Ga, except that the A' center is involved. Equation (5) represents a DAP transition.…”

Section: 2mentioning

confidence: 92%

Competition of Deep and Shallow Impurities in Wide‐Gap II‐VI Semiconductors under Pressure

Weinstein

Ritter

Strachan

et al. 1996

Physica Status Solidi (b)

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The effects of applied pressure on deep defects, shallow ++ deep competition, and related doping problems in 11-VI semiconductors are reviewed. Photoluminescence studies to 100 kbar (at 7 K) on high purity ZnSe, and on several ZnSe samples doped with 10l6 to 10" cm-3 C1, Ga, N, P, and As reveal striking differences between the pressure-shifts of broad-band features involving acceptor and/or donor deep states, and excitonic lines due to shallow band-edge states. The binding energies of observed deep acceptor states tend to decrease with pressure, suggesting that compression acts to destabilize these states against competing shallow hole levels. A deep donor level assigned to an excited state of donor-vacancyz,, complexes emerges from the electron continuum in n-type Gaand C1-doped samples at -25 to 28 kbar. This previously unknown state should not affect doping in ZriSel-zTe, alloys since it arises from existing compensation centers.

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Section: 2mentioning

confidence: 92%

Competition of Deep and Shallow Impurities in Wide‐Gap II‐VI Semiconductors under Pressure

Weinstein

Ritter

Strachan

et al. 1996

Physica Status Solidi (b)

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Control of the n-type doping in AlxGa1 − xSb: DX-center behavior of the Te impurity

Baraldi

Colonna

Covucci

et al. 1997

Materials Science and Engineering: B

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Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy

Nojima

Tanaka

Asahi

1986

Journal of Applied Physics

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The properties of a deep electron trapping center found in Si-doped In0.51Ga0.49−xAlxP (x=0.24) grown on Si-doped GaAs(100) substrates using molecular-beam epitaxy are studied. The trapping parameters for this center are determined as follows: thermal activation energy 0.48 eV, photoionization energy 1.25 eV, and capture barrier 0.10 eV. The concentration of this center is about seven times as high as that of the shallow donor state and is found to increase with an increasing amount of Si atoms incorporated into the crystal. The thermally activated persistent behaviors of photocarriers are also observed at low temperatures. These results suggest that this center can be regarded as a kind of DX center originally found in AlGaAs, which should be depicted as a state with large lattice relaxation using a configuration coordinate diagram.

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Metastable donor states in Te- doped Gal−xAlxSb compounds

Cited by 6 publications

References 4 publications

Competition of Deep and Shallow Impurities in Wide‐Gap II‐VI Semiconductors under Pressure

Competition of Deep and Shallow Impurities in Wide‐Gap II‐VI Semiconductors under Pressure

Control of the n-type doping in AlxGa1 − xSb: DX-center behavior of the Te impurity

Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy

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