Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

Dai, Lei; Bi, Dawei; Zhang, Zhengxuan; Xie, Xizhou; Hu, Zhiyuan; Huang, Huixiang; Zou, Shichang

doi:10.1088/0256-307x/35/5/056101

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…[1,4] In many studies of TID effect, the characteristics of the front-gate transistor and the characteristics of the back-gate transistor were both analyzed. [4][5][6][7][10][11][12][13][14][15][16][17][18] Hence, both of them were all measured in experiment. In their papers, they only stated that the characteristics of the front-gate transistor and the characteristics of the back-gate transistor were measured before irradiation and after a certain total ionizing dose level.…”

Section: Introductionmentioning

confidence: 99%

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie¹,

Bi²,

Hu³

et al. 2018

Chinese Phys. B

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The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOS-FET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect. However, the back-gate curves' measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves' measurement, which are: Fowler-Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling. The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves' measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.

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Section: Introductionmentioning

confidence: 99%

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie¹,

Bi²,

Hu³

et al. 2018

Chinese Phys. B

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show abstract

Progress of radiation effects of silicon photonics devices

Zhou¹,

Hu²,

Bi³

et al. 2019

Acta Phys. Sin.

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Silicon photonics is a fundamental technology, which has great potential applications in optical interconnection for telecom, datacom, and high performance computers, as well as in bio-photonics. Currently considered are the photonics integrated circuits that are able to work in harsh environments such as high energy equipment and future space systems including satellites, space stations and spacecraft. The understanding of the radiation effects of the photonics devices is critical for fabricating radiation hardened photonic integrate chips and maintaining the performance of the devices and the systems. In this paper, the recent progress of the radiation effects of silicon photonic components is summarized. The effects of the high energy particles that possibly degrade the performance of the device are explained, and the response of the passive and active device under radiation are reviewed comprehensively, including waveguides, ring resonators, modulators, detectors, lasers and optical fibers and so on. For passive devices, radiation-induced effects include accelerated-oxidation of the structures, radiation-generated lattice defects, and amorphous densification or compaction in the optical materials. The effective refractive index of the passive device may change consequently, leading the working frequency to shift, the optical confinement to decrease, and the optical power to leak, which accounts for the extra loss or other performance degradation behaviors. For photodetectors and lasers, radiation-induced displacement damage will be dominant. The induced point defects localized in the silicon layer bring about deep level in the forbidden band, acting as generation-recombination centers or trap centers of tunneling effect, which will compensate for either donor or acceptor levels, degrading the response of these optoelectronic device significantly. The plasma dispersion effect is the mainstream approach to building the silicon electro-optic modulators, which will suffer ionization damage in the high energy particle environment, because the interface-trapped hole caused by ionizing radiation reduces the carrier concentration in the depletion region and even induces the pinch-off of the p-doped side of the modulator, which may result in device failure. To improve the radiation hardness of the silicon photonic device, the passivation of the surface, optimization of the waveguide shape, and the choice of appropriate thickness of the buried oxide layer are possible solutions, and more effective approaches are still to be developed.

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Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

Cited by 2 publications

References 16 publications

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Progress of radiation effects of silicon photonics devices

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