Metastable hydrogen-related defects in epitaxial n-GaAs studied by Laplace deep level transient spectroscopy

Abstract

Articles you may be interested inLaplace deep level transient spectroscopy of electron traps in epitaxial metalorganic chemical vapor deposition grown n-GaSb J. Appl. Phys. 113, 024505 (2013); 10.1063/1.4774100Transformation behavior of room-temperature-stable metastable defects in hydrogen-implanted n -type silicon studied by isothermal deep-level transient spectroscopy Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy Abstract. Metastable hydrogen-related M3/M4 defects in n-GaAs epilayers grown by MOVPE are investigated using the high-resolution Laplace DLTS technique. The clear separation of the M4 peak in two components is experimentally obtained. It is shown that the M4 components have different field dependences of the emission rates and can be resolved in electric fields higher than 4·10 4 V/cm. The relations between the Laplace DLTS signal intensities of M3 defect and that of the M4 components during the metastable transformation of the M3/M4 center are studied and discussed.