2017
DOI: 10.1103/physrevlett.118.113901
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Metasurface Polarization Optics: Independent Phase Control of Arbitrary Orthogonal States of Polarization

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Cited by 1,249 publications
(532 citation statements)
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“…Firstly, we notice that the source-drain current is different from a typical graphene's ambipolar I-V curve relative to the Dirac point (~1.4 V), which is a sign of a strong asymmetric charge transfer in this short-channel device. It is known that the graphene sheet underneath the metal contact has a gate-uncontrollable charge density due to Fermi level pinning, which defines the hundreds of nanometers-wide charge transfer region into the channel (36,37). Thus, for long channel (W >> Lct) graphene transistor-like devices, the Fermi level pinning usually introduces a minor degraded carrier transport performance when the channel is electrostatically gated from one to the other polarity, due to the formation of p-n junctions inside the channel (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Firstly, we notice that the source-drain current is different from a typical graphene's ambipolar I-V curve relative to the Dirac point (~1.4 V), which is a sign of a strong asymmetric charge transfer in this short-channel device. It is known that the graphene sheet underneath the metal contact has a gate-uncontrollable charge density due to Fermi level pinning, which defines the hundreds of nanometers-wide charge transfer region into the channel (36,37). Thus, for long channel (W >> Lct) graphene transistor-like devices, the Fermi level pinning usually introduces a minor degraded carrier transport performance when the channel is electrostatically gated from one to the other polarity, due to the formation of p-n junctions inside the channel (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Very recently, the geometric phase was assessed in the context of surface plasmon waves [25] and Young's double-pinhole experiment, where interfering electromagnetic fields emanating from the apertures form a spatially periodic polarization pattern [26]. The notion of Pancharatnam-Berry phase also appears extensively in connection of the so-called geometric phase metasurfaces [27][28][29].…”
Section: Introductionmentioning
confidence: 99%
“…One might hence envisage ultracompact and ultralight optical components acting over all the key parameters of light -amplitude, phase and polarization. What is more, the possibility to access the full T -matrix parameter space by means of a simple hole-shape tuning of a fixed-thickness membrane allows to implement space-variant metasurfaces capable of performing more advanced operations with respect to what is known to date [33], with possible applications to beam shaping, holography, and cryptography. As a final remark we highlight that the targeting procedure, which we performed at a wavelength of 1.55 µm that is of direct interest to the telecommunication technology, is fully scalable, thanks to the scale invariance of Maxwell equations.…”
Section: Inverse Problem and Metasurface Minimalitymentioning
confidence: 99%
“…For instance, a dielectric film with a non-centrosymmetric partially etched planar pattern was proposed as a simple gateway towards strong chiro-optical phenomena [28]. Nonetheless, there is a wide interest in developing subwavelength-patterned high-index dielectrics, both for applications and for fundamental research: from one side, they enable the synthesis of flat lenses, polarimeters, spectrometers, nonlinear components and computer-generated holograms [29][30][31][32][33][34]; from another side, they exhibit a variety of intriguing phenomena such as Fano lineshapes, perfect forward scattering, geometric phase effects, and bound states in the continuum resonances [35][36][37][38][39].…”
Section: Introductionmentioning
confidence: 99%