Method for enhancing topography and material contrast in automatic SEM review

Dotan, Noam

doi:10.1117/12.350836

Cited by 9 publications

(2 citation statements)

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“…This contrast is present in both images, but it seems to influence the SE 1 signal recorded by our InLens detector only. Dotan [74] finds the same effect and uses it deliberately to avoid charge influences in the ET signal. However, this does not mean that ET detectors in general are not capable to sense these slight charges on a sample surface, as demonstrated by Loos et al [61,66] with an Environmental SEM (ESEM) from FEI Company.…”

Section: Visualization Of Filler Particles Inside a Polymer Matrixmentioning

confidence: 99%

Analyzing the quality of carbon nanotube dispersions in polymers using scanning electron microscopy

Kovacs

Andresen

Pauls

et al. 2007

Carbon

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The ability to examine conducting filler particles in an insulating polymer matrix by scanning electron microscopy (SEM) was investigated. The detection of selected secondary electrons is necessary to resolve sub-micron scale filler particles, but not every SEM detector seems to be able to monitor the small changes introduced by the conducting filler particles. The influence of SEM parameters and the challenge of image interpretation in view of the apparent lack of appropriate information in literature are discussed. In accordance with other experiments on light element samples, all monitored electrons seem to be emitted within approximately 50 nm of the sample depth and no information is accessible from deeper regions even by increasing the acceleration voltage.

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Section: Visualization Of Filler Particles Inside a Polymer Matrixmentioning

confidence: 99%

Analyzing the quality of carbon nanotube dispersions in polymers using scanning electron microscopy

Kovacs

Andresen

Pauls

et al. 2007

Carbon

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“…Defect review and defect characterization in semiconductor manufacturing environment has some unique requirements [1]. Beyond fundamental analysis requirements such as high sensitivity and high energy resolution, elemental analysis must be easy to operate and easy to understand.…”

Section: Introductionmentioning

confidence: 99%

Advanced elemental analysis methods for sub 30nm defects in a defect review SEM

Shemesh

Boehm

Greenberg

et al. 2011

2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

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as development phases became shorter, fast defect characterization is highly important. In addition, new chemicals involved in sub 28nm semiconductor processes introduce new types of defects. The variety of defect types complicates defect root cause analysis, so that image based defect analysis is limited, and defect material information becomes more important. Thus elemental analysis of defects in a defect review SEM gains importance in sub 28nm processes.This work presents a new type of Energy Dispersive X ray Spectrometer (EDX), integrated together with a unique e-beam column and high collection solid angle. It allows x-ray count rates that are more than an order of magnitude higher compared to traditional detectors. The high count rate speeds up the analysis period to less than 2 seconds for sub 30nm defects. Short analysis time is critical for such small sized defects as they can disappear due to charging or evaporation. In addition, the new detector-column configuration becomes sensitive to very thin films (down to 1nm), something that was not reasonable for the traditional SiLi x-ray spectrometers.Traditional EDX requires >5keV beam energies and >500pA beam current. New layers that are introduced to < 40nm processes, such as Ultra Low K materials, are sensitive to high electron doses. The new, fast EDX allows defect analysis on sensitive layers without damaging the analysis area

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Advanced process development and control based on a fully automated SEM with ADC

Ben-Porath¹,

Hayes²,

Skumanich³

10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295)

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Method for enhancing topography and material contrast in automatic SEM review

Cited by 9 publications

References 0 publications

Analyzing the quality of carbon nanotube dispersions in polymers using scanning electron microscopy

Analyzing the quality of carbon nanotube dispersions in polymers using scanning electron microscopy

Advanced elemental analysis methods for sub 30nm defects in a defect review SEM

Advanced process development and control based on a fully automated SEM with ADC

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