2009
DOI: 10.1116/1.3263171
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Method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist

Abstract: A method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist is provided for enhanced pattern-transfer capabilities. The essence of the proposed method is to form a protective "cap" on top of the resist structure by means of electron-beam-induced deposition ͑EBID͒ in a self-aligned approach. This is implemented by a combination of electron-beam lithography and EBID during exposure of the resist material in the presence of a precursor gas. The results of the propos… Show more

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Cited by 5 publications
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“…The radicals diffuse catalyzing redistribution reactions which crosslink neighboring molecules into base-insoluble hydrogenenriched SiO x oligomers. [46][47][48] Ambient conditions are insufficiently inert to completely impede the reactions, 44 resulting in limited shelf life 37 and transient exposure behaviors 38 .…”
mentioning
confidence: 99%
“…The radicals diffuse catalyzing redistribution reactions which crosslink neighboring molecules into base-insoluble hydrogenenriched SiO x oligomers. [46][47][48] Ambient conditions are insufficiently inert to completely impede the reactions, 44 resulting in limited shelf life 37 and transient exposure behaviors 38 .…”
mentioning
confidence: 99%