Method for Measuring Anisotropic Electrical Resistivity

Abstract

A novel method is presented for measuring anisotropic electrical resistivity. In this method, a pedestal structure is fabricated on a surface of a crystal. Such a single sample enables measurement of anisotropic resistivity tensor elements simultaneously. The pedestal structure can be very small, in which case the measurement provides a more precise evaluation of anisotropic resistivity than ever. This method is exclusively advantageous in the case of laminar materials or thin films. An example is given of a measurement of the high-T c superconductor Bi2Sr2CaCu2O8+δ.