Method of collecting pure vibrational absorption spectra of amorphous thin films

Li, Tong; Kanicki, Jerzy; Mohler, Carol

doi:10.1016/s0040-6090(99)00193-5

Cited by 2 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because we were investigating thin films, we had to use specific measurement method to avoid interference fringes that would perturb the spectra. 16) We used a method developed by one of the authors, 17) which utilizes the fact that, at Brewster incidence, the p-polarized light undergoes no reflection at the air/film interface. The following parameters were extracted from the curves plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances

Martin

Chiang

Nahm

et al. 2001

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

We have analyzed the influence of the hydrogenated amorphous silicon (a-Si:H) thickness on the electrical performances of top gate thin-film transistors (TFTs). We have observed that, when the a-Si:H thickness increases, the threshold voltage and the subthreshold slope decrease. The modification of the TFT apparent field-effect mobility has also been investigated: we have shown that it first increases with the a-Si:H thickness, and then decreases for thicker a-Si:H films. This change of electrical performances is most likely associated with both the variation of a-Si:H microstructure during the film depositions and the effect of parasitic source and drain series resistances. We have demonstrated that for a given TFT geometry, it is therefore possible to define an optimum a-Si:H thickness ensuring maximum TFT electrical performances, and that this optimum thickness increases significantly with the TFT channel length.

show abstract

Section: Resultsmentioning

confidence: 99%