1981
DOI: 10.1049/el:19810495
|View full text |Cite
|
Sign up to set email alerts
|

Method of fabricating high-Q silicon varactor diodes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2019
2019
2021
2021

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(2 citation statements)
references
References 0 publications
0
2
0
Order By: Relevance
“…This has recently been demonstrated for the design of adaptive matching networks [5] using a specially developed silicon-on-glass varactor diode technology. The basic device design concept is not new [4] but the technology necessary for realizing a high-quality integration has only recently become available. This paper gives the first detailed description of the new varactor technology.…”
Section: Introductionmentioning
confidence: 99%
“…This has recently been demonstrated for the design of adaptive matching networks [5] using a specially developed silicon-on-glass varactor diode technology. The basic device design concept is not new [4] but the technology necessary for realizing a high-quality integration has only recently become available. This paper gives the first detailed description of the new varactor technology.…”
Section: Introductionmentioning
confidence: 99%
“…At Sarnoff, Rosen was primarily working on high power and high frequency oscillators and switches [19], and he became increasingly convinced of the value of using high resistivity silicon, as opposed to GaAs and germanium substrates, especially as the interest and applications for power and switching MMICs (millimeter-wave integrated circuits) increased. In what is considered a prescient and landmark paper in 1981 [20], Rosen and colleagues at RCA outlined their vision and work on silicon-based millimeter-wave circuits.…”
Section: Introductionmentioning
confidence: 99%