Method to Measure the Precipitated and Total Oxygen Concentration in Silicon

Abstract

discussion of these differences based on these experimental data above.It can be consequently concluded from the experimental results that this delineation method is effective and useful for investigating the lateral diffusion length of As and P in poly-Si. AcknowledgmentsThe authors wish to thank Mamoru Kondo and Eisuke Arai for their encouragement and helpful discussions.

Resonant Interaction between Localized and Extended Vibrational Modes in Si:O18under Pressure

“…In as-grown crystals, oxygen occurs principally as an interstitial defect (O i ) [2,3]. The oxygen atom is bound to two nearest-neighbor silicon atoms and is found in the off-bond-center position.…”

Interstitial oxygen in silicon under hydrostatic pressure

“…In as-grown Si crystals, oxygen exists primarily as an interstitial defect, denoted O i . 5,6 In this form, the oxygen binds with two Si atoms, residing in an off-center position in the ͓111͔ plane equidistant from the Si atoms. Using local vibrational mode spectroscopy, 7,8 Hrostowski and Kaiser 9 measured the now-famous 1136 cm Ϫ1 absorption peak of the 16 O i stretch mode at liquid-helium temperatures.…”

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“…It is known that oxygen in silicon occupies mainly the bridging position, in which its two stretching bonds are distributed between two stice Si atoms [4,8]. While in Cz-Si, oxygen can be located not only in the form of Si-O-Si quasi-molecules but in the form of some SiO x precipitates produced during the ingot growth process, too [4,9]. Thus, it was shown [9] that, in some as-grown Si monocrystals, the oxygen content in the precipitate phase may achieve 20 % of the total oxygen concentration.…”

“…While in Cz-Si, oxygen can be located not only in the form of Si-O-Si quasi-molecules but in the form of some SiO x precipitates produced during the ingot growth process, too [4,9]. Thus, it was shown [9] that, in some as-grown Si monocrystals, the oxygen content in the precipitate phase may achieve 20 % of the total oxygen concentration. In our assumption, the reaction with involving the radicals, forming Si-O-Si quasi-molecules and SiO x precipitates, can lead to dissociation of their chemical bonds under magnetic field influence.…”